Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride

G. B. Winkelman, Christian Dwyer, T. S. Hudson, D. Nguyen-Manh, M. Döblinger, R. L. Satet, M. J. Hoffmann, D. J H Cockayne

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si3N4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si 3N4 grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.

Original languageEnglish (US)
Pages (from-to)755-762
Number of pages8
JournalPhilosophical Magazine Letters
Volume84
Issue number12
DOIs
StatePublished - Dec 2004
Externally publishedYes

Fingerprint

Rare earth elements
Silicon nitride
silicon nitrides
Grain boundaries
rare earth elements
grain boundaries
Atoms
Rare earths
atoms
Prisms
stopping
prisms
attachment
periodic variations
Transmission electron microscopy
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
silicon nitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Winkelman, G. B., Dwyer, C., Hudson, T. S., Nguyen-Manh, D., Döblinger, M., Satet, R. L., ... Cockayne, D. J. H. (2004). Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride. Philosophical Magazine Letters, 84(12), 755-762. https://doi.org/10.1080/09500830500041302

Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride. / Winkelman, G. B.; Dwyer, Christian; Hudson, T. S.; Nguyen-Manh, D.; Döblinger, M.; Satet, R. L.; Hoffmann, M. J.; Cockayne, D. J H.

In: Philosophical Magazine Letters, Vol. 84, No. 12, 12.2004, p. 755-762.

Research output: Contribution to journalArticle

Winkelman, GB, Dwyer, C, Hudson, TS, Nguyen-Manh, D, Döblinger, M, Satet, RL, Hoffmann, MJ & Cockayne, DJH 2004, 'Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride', Philosophical Magazine Letters, vol. 84, no. 12, pp. 755-762. https://doi.org/10.1080/09500830500041302
Winkelman, G. B. ; Dwyer, Christian ; Hudson, T. S. ; Nguyen-Manh, D. ; Döblinger, M. ; Satet, R. L. ; Hoffmann, M. J. ; Cockayne, D. J H. / Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride. In: Philosophical Magazine Letters. 2004 ; Vol. 84, No. 12. pp. 755-762.
@article{50d42795db174057bed4ce4b741724e5,
title = "Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride",
abstract = "The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si3N4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si 3N4 grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.",
author = "Winkelman, {G. B.} and Christian Dwyer and Hudson, {T. S.} and D. Nguyen-Manh and M. D{\"o}blinger and Satet, {R. L.} and Hoffmann, {M. J.} and Cockayne, {D. J H}",
year = "2004",
month = "12",
doi = "10.1080/09500830500041302",
language = "English (US)",
volume = "84",
pages = "755--762",
journal = "Philosophical Magazine Letters",
issn = "0950-0839",
publisher = "Taylor and Francis Ltd.",
number = "12",

}

TY - JOUR

T1 - Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride

AU - Winkelman, G. B.

AU - Dwyer, Christian

AU - Hudson, T. S.

AU - Nguyen-Manh, D.

AU - Döblinger, M.

AU - Satet, R. L.

AU - Hoffmann, M. J.

AU - Cockayne, D. J H

PY - 2004/12

Y1 - 2004/12

N2 - The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si3N4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si 3N4 grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.

AB - The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si3N4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si 3N4 grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.

UR - http://www.scopus.com/inward/record.url?scp=19944380152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944380152&partnerID=8YFLogxK

U2 - 10.1080/09500830500041302

DO - 10.1080/09500830500041302

M3 - Article

VL - 84

SP - 755

EP - 762

JO - Philosophical Magazine Letters

JF - Philosophical Magazine Letters

SN - 0950-0839

IS - 12

ER -