Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride

G. B. Winkelman, C. Dwyer, T. S. Hudson, D. Nguyen-Manh, M. Döblinger, R. L. Satet, M. J. Hoffmann, D. J.H. Cockayne

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si3N4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si 3N4 grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.

Original languageEnglish (US)
Pages (from-to)755-762
Number of pages8
JournalPhilosophical Magazine Letters
Volume84
Issue number12
DOIs
StatePublished - Dec 1 2004
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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