Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride

G. B. Winkelman; C. Dwyer; T. S. Hudson; D. Nguyen-Manh; M. Döblinger; R. L. Satet; M. J. Hoffmann; D. J.H. Cockayne

doi:10.1080/09500830500041302

Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride

G. B. Winkelman, C. Dwyer, T. S. Hudson, D. Nguyen-Manh, M. Döblinger, R. L. Satet, M. J. Hoffmann, D. J.H. Cockayne

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si₃N₄ specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si ₃N₄ grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.

Original language	English (US)
Pages (from-to)	755-762
Number of pages	8
Journal	Philosophical Magazine Letters
Volume	84
Issue number	12
DOIs	https://doi.org/10.1080/09500830500041302
State	Published - Dec 2004
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1080/09500830500041302

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title = "Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride",

abstract = "The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si3N4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si 3N4 grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.",

author = "Winkelman, {G. B.} and C. Dwyer and Hudson, {T. S.} and D. Nguyen-Manh and M. D{\"o}blinger and Satet, {R. L.} and Hoffmann, {M. J.} and Cockayne, {D. J.H.}",

note = "Funding Information: ACKNOWLEDGEMENTS G.W. thanks Crispin Hetherington for instruction on the JEOL 2200FS. C.D. is extremely grateful to R{\"u}diger Meyer for guidance during the initial stages of image correction. Financial support from the European Community Growth Programme (Contract No. G5RD-CT-2001-00586) and the NSF (Grant No. DMR-0010062) is gratefully acknowledged.",

year = "2004",

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doi = "10.1080/09500830500041302",

language = "English (US)",

volume = "84",

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AU - Winkelman, G. B.

AU - Dwyer, C.

AU - Hudson, T. S.

AU - Nguyen-Manh, D.

AU - Döblinger, M.

AU - Satet, R. L.

AU - Hoffmann, M. J.

AU - Cockayne, D. J.H.

N1 - Funding Information: ACKNOWLEDGEMENTS G.W. thanks Crispin Hetherington for instruction on the JEOL 2200FS. C.D. is extremely grateful to Rüdiger Meyer for guidance during the initial stages of image correction. Financial support from the European Community Growth Programme (Contract No. G5RD-CT-2001-00586) and the NSF (Grant No. DMR-0010062) is gratefully acknowledged.

PY - 2004/12

Y1 - 2004/12

N2 - The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si3N4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si 3N4 grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.

AB - The arrangement of rare-earth atoms at {100} prism planes of La- and Lu-containing polycrystalline Si3N4 specimens is studied using high-angle annular dark-field scanning transmission electron microscopy. For both systems, the attachment sites of rare-earth atoms are well-defined and largely conform to the periodicity of the terminating plane of the Si 3N4 grain. We observe significant differences between the structural arrangement of La and Lu atoms at the interface.

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Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride

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