Nonuniform doping along the channel direction has played a central role in the power MOS device field. In addition, a new class of submicron devices using nonuniformly doped channels have exhibited remarkable resistance to short channel effects. Modeling of these devices for CAD applications has been limited to empirical models which assume uniform doping. The substrate doping concentration directly affects the electrostatics in the channel region and any variation in its value has significant effects on the device parameters. This paper presents a generalized version of the MOS charge-sheet model which physically incorporates nonuniform doping along the channel into the analysis. The model is developed and verified using the two dimensional device simulator PISCES on nonuniformly doped MOSFETs.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry