Application of reverse bias recovery technique to address PID issue: Incompleteness of shunt resistance and quantum efficiency recovery

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Potential Induced Degradation (PID) has recently been identified as one of the major field durability issues of PV modules. The industry is attempting to address this issue at the module/cell production level by modifying the cell, glass and/or encapsulant properties and at the system level through the application of reverse bias voltage during the nighttime. However, there is a lingering question on the full recovery of the cells through the reverse bias application technique. The results obtained in this work indicate that the near-full recovery of efficiency at high irradiance levels can be achieved but the full recovery of efficiency at low irradiance levels, the shunt resistance and the quantum efficiency at low wavelengths could not be achieved.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages925-929
Number of pages5
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Quantum efficiency
Recovery
Degradation
Bias voltage
Durability
Glass
Wavelength
Industry

Keywords

  • durability
  • high voltage
  • PID
  • quantum efficiency
  • reliability
  • shunt resistance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Oh, J., Bowden, S., & Tamizhmani, G. (2014). Application of reverse bias recovery technique to address PID issue: Incompleteness of shunt resistance and quantum efficiency recovery. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 925-929). [6925065] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925065

Application of reverse bias recovery technique to address PID issue : Incompleteness of shunt resistance and quantum efficiency recovery. / Oh, Jaewon; Bowden, Stuart; Tamizhmani, Govindasamy.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 925-929 6925065.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Oh, J, Bowden, S & Tamizhmani, G 2014, Application of reverse bias recovery technique to address PID issue: Incompleteness of shunt resistance and quantum efficiency recovery. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925065, Institute of Electrical and Electronics Engineers Inc., pp. 925-929, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925065
Oh J, Bowden S, Tamizhmani G. Application of reverse bias recovery technique to address PID issue: Incompleteness of shunt resistance and quantum efficiency recovery. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 925-929. 6925065 https://doi.org/10.1109/PVSC.2014.6925065
Oh, Jaewon ; Bowden, Stuart ; Tamizhmani, Govindasamy. / Application of reverse bias recovery technique to address PID issue : Incompleteness of shunt resistance and quantum efficiency recovery. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 925-929
@inproceedings{13be8ecd099a479db5a950fab7fddb51,
title = "Application of reverse bias recovery technique to address PID issue: Incompleteness of shunt resistance and quantum efficiency recovery",
abstract = "Potential Induced Degradation (PID) has recently been identified as one of the major field durability issues of PV modules. The industry is attempting to address this issue at the module/cell production level by modifying the cell, glass and/or encapsulant properties and at the system level through the application of reverse bias voltage during the nighttime. However, there is a lingering question on the full recovery of the cells through the reverse bias application technique. The results obtained in this work indicate that the near-full recovery of efficiency at high irradiance levels can be achieved but the full recovery of efficiency at low irradiance levels, the shunt resistance and the quantum efficiency at low wavelengths could not be achieved.",
keywords = "durability, high voltage, PID, quantum efficiency, reliability, shunt resistance",
author = "Jaewon Oh and Stuart Bowden and Govindasamy Tamizhmani",
year = "2014",
month = "10",
day = "15",
doi = "10.1109/PVSC.2014.6925065",
language = "English (US)",
isbn = "9781479943982",
pages = "925--929",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Application of reverse bias recovery technique to address PID issue

T2 - Incompleteness of shunt resistance and quantum efficiency recovery

AU - Oh, Jaewon

AU - Bowden, Stuart

AU - Tamizhmani, Govindasamy

PY - 2014/10/15

Y1 - 2014/10/15

N2 - Potential Induced Degradation (PID) has recently been identified as one of the major field durability issues of PV modules. The industry is attempting to address this issue at the module/cell production level by modifying the cell, glass and/or encapsulant properties and at the system level through the application of reverse bias voltage during the nighttime. However, there is a lingering question on the full recovery of the cells through the reverse bias application technique. The results obtained in this work indicate that the near-full recovery of efficiency at high irradiance levels can be achieved but the full recovery of efficiency at low irradiance levels, the shunt resistance and the quantum efficiency at low wavelengths could not be achieved.

AB - Potential Induced Degradation (PID) has recently been identified as one of the major field durability issues of PV modules. The industry is attempting to address this issue at the module/cell production level by modifying the cell, glass and/or encapsulant properties and at the system level through the application of reverse bias voltage during the nighttime. However, there is a lingering question on the full recovery of the cells through the reverse bias application technique. The results obtained in this work indicate that the near-full recovery of efficiency at high irradiance levels can be achieved but the full recovery of efficiency at low irradiance levels, the shunt resistance and the quantum efficiency at low wavelengths could not be achieved.

KW - durability

KW - high voltage

KW - PID

KW - quantum efficiency

KW - reliability

KW - shunt resistance

UR - http://www.scopus.com/inward/record.url?scp=84912098903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912098903&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2014.6925065

DO - 10.1109/PVSC.2014.6925065

M3 - Conference contribution

AN - SCOPUS:84912098903

SN - 9781479943982

SP - 925

EP - 929

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

ER -