Application of novel chemical precursors for the preparation of Si-Ge-C heterostructures and superlattices

David C. Nesting, John Kouvetakis, Julie Lorentzen, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated new synthetic methods to Si-Ge-C materials by UHV-CVD and novel chemical precursors. The reactions of (SiH 3) 4C and (GeH 3) 4C with GeH 4 and SiH 4 produce diamond structured materials with the general formula (CS 4) xGe y and (CGe 4) xSi y respectively. These reactions demonstrate the application of novel C-H free precursors that incorporate Si 4C and Ge 4C building blocks to prepare single phase materials containing a significant amount of carbon (5-6 at.%). They also indicate the remarkable degree of compositional control provided by the precursor to incorporate the Si 4C and Ge 4C molecular framework into the solid state. A range of Si 1-x-yGe xC y compositions were also prepared pseudomorphically on [1 0 0] Si at 450-500 °C via reactions of (SiH 3) 4C with mixtures of GeH 4 and SiH 4. The (Si 2Ge) 31C 6 composition appears to display ordering of the Ge and Si atoms in the structure. The incorporation of C in the Si planes seems to provide local strain centers which facilitate the formation of this ordered phase.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages281-286
Number of pages6
Volume533
StatePublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 17 1998

Other

OtherProceedings of the 1998 MRS Spring Symposium
CitySan Francisco, CA, USA
Period4/13/984/17/98

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Nesting, D. C., Kouvetakis, J., Lorentzen, J., & Menendez, J. (1998). Application of novel chemical precursors for the preparation of Si-Ge-C heterostructures and superlattices. In Materials Research Society Symposium - Proceedings (Vol. 533, pp. 281-286). MRS.