The technique of chemically enhanced vapour etching (CEVE) has been used in the fabrication of ultra-thin CoSi2 wires on Si substrates. Essential aspects of the CEVE method are first summarized. We then demonstrate the application of the technique in the selective patterning of SiO2 covered with a monolayer of organic acid. Parallel studies of thin Co layers directly deposited on (111) and (100) Si substrates were employed to optimize the CoSi2 growth conditions. Conductance measurements of the CoSi2 thin films and patterned wires are briefly discussed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry