Application of chemically enhanced vapour etching in the fabrication on nanostructures

Michael Kozicki, B. Kardynal, S. J. Yang, T. Kim, M. V. Sidorov, David Smith

Research output: Contribution to journalArticle

Abstract

The technique of chemically enhanced vapour etching (CEVE) has been used in the fabrication of ultra-thin CoSi2 wires on Si substrates. Essential aspects of the CEVE method are first summarized. We then demonstrate the application of the technique in the selective patterning of SiO2 covered with a monolayer of organic acid. Parallel studies of thin Co layers directly deposited on (111) and (100) Si substrates were employed to optimize the CoSi2 growth conditions. Conductance measurements of the CoSi2 thin films and patterned wires are briefly discussed.

Original languageEnglish (US)
JournalSemiconductor Science and Technology
Volume13
Issue number8 SUPPL. A
StatePublished - 1998

Fingerprint

Etching
Nanostructures
Vapors
etching
wire
Wire
vapors
Fabrication
fabrication
Organic acids
Substrates
Monolayers
Thin films
acids
thin films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Application of chemically enhanced vapour etching in the fabrication on nanostructures. / Kozicki, Michael; Kardynal, B.; Yang, S. J.; Kim, T.; Sidorov, M. V.; Smith, David.

In: Semiconductor Science and Technology, Vol. 13, No. 8 SUPPL. A, 1998.

Research output: Contribution to journalArticle

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AU - Smith, David

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