Abstract
Modal expansions of the wave function and a mode-matching technique are used to calculate the transmission characteristics of semiconductor quantum wire structures assuming hard wall confinement in the transverse directions. Results for cascaded right-angle bends and periodic structures in a split-gate configuration are presented. A sharp transition to a plateau of zero conductance is observed for the double bend configuration. For periodic structures in the split-gate configuration, highly resonant behavior similar to that in tunneling resonant diodes is found. Calculated current-voltage characteristics for the case of two narrow constrictions are shown, exhibiting a region of negative differential resistance.
| Original language | English (US) |
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| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Murray J. Gibson, Harold G. Craighead |
| Place of Publication | Bellingham, WA, United States |
| Publisher | Publ by Int Soc for Optical Engineering |
| Pages | 45-56 |
| Number of pages | 12 |
| Volume | 1284 |
| ISBN (Print) | 0819403350 |
| State | Published - 1990 |
| Externally published | Yes |
| Event | Nanostructures and Microstructure Correlation with Physical Properties of Semiconductors - San Diego, CA, USA Duration: Mar 20 1990 → Mar 21 1990 |
Other
| Other | Nanostructures and Microstructure Correlation with Physical Properties of Semiconductors |
|---|---|
| City | San Diego, CA, USA |
| Period | 3/20/90 → 3/21/90 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics