Anomalous migration of fluorine and electrical activation of boron in BF+2-implanted silicon

M. Y. Tsai; B. G. Streetman; P. Williams; C. A. Evans

doi:10.1063/1.89961

Anomalous migration of fluorine and electrical activation of boron in BF⁺₂-implanted silicon

M. Y. Tsai, B. G. Streetman, P. Williams, C. A. Evans

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

Fluorine distribution profiles for silicon implanted with 150-keV 1×10¹⁵-cm^-2 BF⁺₂ at room temperature or at -110°C have been measured by SIMS as a function of anneal temperature. Anomalous migration of fluorine during annealing is observed, and is explained in terms of recrystallization and impurity-gettering effects. Electrical carrier distribution profiles of room-temperature BF⁺ ₂-implanted silicon, measured by differential Hall effect methods, demonstrate that boron is electrically activated by epitaxial recrystallization during 550°C annealing. However, a damaged region near the crystalline-amorphous interface remains after recrystallization. This damaged layer is apparently responsible for the fluorine gettering.

Original language	English (US)
Pages (from-to)	144-147
Number of pages	4
Journal	Applied Physics Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1063/1.89961
State	Published - 1978
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Fluorine distribution profiles for silicon implanted with 150-keV 1×1015-cm-2 BF+2 at room temperature or at -110°C have been measured by SIMS as a function of anneal temperature. Anomalous migration of fluorine during annealing is observed, and is explained in terms of recrystallization and impurity-gettering effects. Electrical carrier distribution profiles of room-temperature BF+ 2-implanted silicon, measured by differential Hall effect methods, demonstrate that boron is electrically activated by epitaxial recrystallization during 550°C annealing. However, a damaged region near the crystalline-amorphous interface remains after recrystallization. This damaged layer is apparently responsible for the fluorine gettering.",

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AU - Tsai, M. Y.

AU - Streetman, B. G.

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AU - Evans, C. A.

PY - 1978

Y1 - 1978

N2 - Fluorine distribution profiles for silicon implanted with 150-keV 1×1015-cm-2 BF+2 at room temperature or at -110°C have been measured by SIMS as a function of anneal temperature. Anomalous migration of fluorine during annealing is observed, and is explained in terms of recrystallization and impurity-gettering effects. Electrical carrier distribution profiles of room-temperature BF+ 2-implanted silicon, measured by differential Hall effect methods, demonstrate that boron is electrically activated by epitaxial recrystallization during 550°C annealing. However, a damaged region near the crystalline-amorphous interface remains after recrystallization. This damaged layer is apparently responsible for the fluorine gettering.

AB - Fluorine distribution profiles for silicon implanted with 150-keV 1×1015-cm-2 BF+2 at room temperature or at -110°C have been measured by SIMS as a function of anneal temperature. Anomalous migration of fluorine during annealing is observed, and is explained in terms of recrystallization and impurity-gettering effects. Electrical carrier distribution profiles of room-temperature BF+ 2-implanted silicon, measured by differential Hall effect methods, demonstrate that boron is electrically activated by epitaxial recrystallization during 550°C annealing. However, a damaged region near the crystalline-amorphous interface remains after recrystallization. This damaged layer is apparently responsible for the fluorine gettering.

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Anomalous migration of fluorine and electrical activation of boron in BF⁺₂-implanted silicon

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