Anomalous migration of fluorine and electrical activation of boron in BF+2-implanted silicon

M. Y. Tsai, B. G. Streetman, P. Williams, C. A. Evans

Research output: Contribution to journalArticle

46 Scopus citations

Abstract

Fluorine distribution profiles for silicon implanted with 150-keV 1×1015-cm-2 BF+2 at room temperature or at -110°C have been measured by SIMS as a function of anneal temperature. Anomalous migration of fluorine during annealing is observed, and is explained in terms of recrystallization and impurity-gettering effects. Electrical carrier distribution profiles of room-temperature BF+ 2-implanted silicon, measured by differential Hall effect methods, demonstrate that boron is electrically activated by epitaxial recrystallization during 550°C annealing. However, a damaged region near the crystalline-amorphous interface remains after recrystallization. This damaged layer is apparently responsible for the fluorine gettering.

Original languageEnglish (US)
Pages (from-to)144-147
Number of pages4
JournalApplied Physics Letters
Volume32
Issue number3
DOIs
StatePublished - Dec 1 1978
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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