Fluorine distribution profiles for silicon implanted with 150-keV 1×1015-cm-2 BF+2 at room temperature or at -110°C have been measured by SIMS as a function of anneal temperature. Anomalous migration of fluorine during annealing is observed, and is explained in terms of recrystallization and impurity-gettering effects. Electrical carrier distribution profiles of room-temperature BF+ 2-implanted silicon, measured by differential Hall effect methods, demonstrate that boron is electrically activated by epitaxial recrystallization during 550°C annealing. However, a damaged region near the crystalline-amorphous interface remains after recrystallization. This damaged layer is apparently responsible for the fluorine gettering.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)