Anomalous LO phonon lifetime in AlAs

M. Canonico; C. Poweleit; Jose Menendez; A. Debernardi; Shane Johnson; Yong-Hang Zhang

doi:10.1103/PhysRevLett.88.215502

Anomalous LO phonon lifetime in AlAs

M. Canonico, C. Poweleit, Jose Menendez, A. Debernardi, Shane Johnson, Yong-Hang Zhang

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17 Scopus citations

Abstract

The frequency and linewidth of the Raman-activated longitudinal optical (LO) phonons was measured as a function of temperature in the compounds GaAs and AlAs. The low-temperature lifetime of the LO phonon in AlAs and GaAs were found to be 9.7 ps and 9.5 ps respectively, which contradicted earlier predictions. The theoretical and experimental results showed agreement when the accidental degeneracy between the AlAs LO phonon frequency and a feature in the two-phonon density of states was taken into account.

Original language	English (US)
Article number	215502
Pages (from-to)	2155021-2155024
Number of pages	4
Journal	Physical Review Letters
Volume	88
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevLett.88.215502
State	Published - May 27 2002

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.88.215502

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title = "Anomalous LO phonon lifetime in AlAs",

abstract = "The frequency and linewidth of the Raman-activated longitudinal optical (LO) phonons was measured as a function of temperature in the compounds GaAs and AlAs. The low-temperature lifetime of the LO phonon in AlAs and GaAs were found to be 9.7 ps and 9.5 ps respectively, which contradicted earlier predictions. The theoretical and experimental results showed agreement when the accidental degeneracy between the AlAs LO phonon frequency and a feature in the two-phonon density of states was taken into account.",

author = "M. Canonico and C. Poweleit and Jose Menendez and A. Debernardi and Shane Johnson and Yong-Hang Zhang",

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T1 - Anomalous LO phonon lifetime in AlAs

AU - Canonico, M.

AU - Poweleit, C.

AU - Menendez, Jose

AU - Debernardi, A.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2002/5/27

Y1 - 2002/5/27

N2 - The frequency and linewidth of the Raman-activated longitudinal optical (LO) phonons was measured as a function of temperature in the compounds GaAs and AlAs. The low-temperature lifetime of the LO phonon in AlAs and GaAs were found to be 9.7 ps and 9.5 ps respectively, which contradicted earlier predictions. The theoretical and experimental results showed agreement when the accidental degeneracy between the AlAs LO phonon frequency and a feature in the two-phonon density of states was taken into account.

AB - The frequency and linewidth of the Raman-activated longitudinal optical (LO) phonons was measured as a function of temperature in the compounds GaAs and AlAs. The low-temperature lifetime of the LO phonon in AlAs and GaAs were found to be 9.7 ps and 9.5 ps respectively, which contradicted earlier predictions. The theoretical and experimental results showed agreement when the accidental degeneracy between the AlAs LO phonon frequency and a feature in the two-phonon density of states was taken into account.

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JO - Physical Review Letters

JF - Physical Review Letters

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ER -

Anomalous LO phonon lifetime in AlAs

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