Anomalous isoelectronic chalcogen rejection in 2D anisotropic vdW TiS3(1-:X)Se3x trichalcogenides

Ashutosh Agarwal, Ying Qin, Bin Chen, Mark Blei, Kedi Wu, Lei Liu, Yuxia Shen, David Wright, Matthew Green, Houlong Zhuang, Sefaattin Tongay

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Alloying in semiconductors has enabled many civilian technologies in electronics, optoelectronics, photonics, and others. While the alloying phenomenon is well established in traditional bulk semiconductors owing to a vast array of available ternary phase diagrams, alloying in 2D materials still remains at its seminal stages. This is especially true for transition metal trichalcogenides (TMTCs) such as TiS3 which has been recently predicted to be a direct gap, high carrier mobility, pseudo-1D semiconductor. In this work, we report on an unusual alloying rejection behavior in TiS3(1-x)Se3x vdW crystals. TEM, SEM, EDS, and angle-resolved Raman measurements show that only a miniscule amount (8%) of selenium can be successfully alloyed into a TiS3 host matrix despite vastly different precursor amounts as well as growth temperatures. This unusual behavior contrasts with other vdW systems such as TiS2(1-x)Se2x, MoS2(1-x)Se2x, Mo1-xWxS2, WS2(1-x)Se2x, where continuous alloying can be attained. Angle-resolved Raman and kelvin probe force microscopy measurements offer insights into how selenium alloying influences in-plane structural anisotropy as well as electron affinity values of exfoliated sheets. Our cluster expansion theory calculations show that only the alloys with a small amount of Se can be attained due to energetic instability above/below a certain selenium concentration threshold in the ternary phase diagrams. The overall findings highlight potential challenges in achieving stable Ti based TMTCs alloys.

Original languageEnglish (US)
Pages (from-to)15654-15660
Number of pages7
JournalNanoscale
Volume10
Issue number33
DOIs
StatePublished - Sep 7 2018

Fingerprint

Chalcogens
Alloying
Selenium
Semiconductor materials
Phase diagrams
Transition metal alloys
Electron affinity
Carrier mobility
Growth temperature
Optoelectronic devices
Photonics
Transition metals
Energy dispersive spectroscopy
Microscopic examination
Anisotropy
Electronic equipment
Transmission electron microscopy
Crystals
Scanning electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Anomalous isoelectronic chalcogen rejection in 2D anisotropic vdW TiS3(1-:X)Se3x trichalcogenides. / Agarwal, Ashutosh; Qin, Ying; Chen, Bin; Blei, Mark; Wu, Kedi; Liu, Lei; Shen, Yuxia; Wright, David; Green, Matthew; Zhuang, Houlong; Tongay, Sefaattin.

In: Nanoscale, Vol. 10, No. 33, 07.09.2018, p. 15654-15660.

Research output: Contribution to journalArticle

Agarwal, A, Qin, Y, Chen, B, Blei, M, Wu, K, Liu, L, Shen, Y, Wright, D, Green, M, Zhuang, H & Tongay, S 2018, 'Anomalous isoelectronic chalcogen rejection in 2D anisotropic vdW TiS3(1-:X)Se3x trichalcogenides', Nanoscale, vol. 10, no. 33, pp. 15654-15660. https://doi.org/10.1039/c8nr04274h
Agarwal, Ashutosh ; Qin, Ying ; Chen, Bin ; Blei, Mark ; Wu, Kedi ; Liu, Lei ; Shen, Yuxia ; Wright, David ; Green, Matthew ; Zhuang, Houlong ; Tongay, Sefaattin. / Anomalous isoelectronic chalcogen rejection in 2D anisotropic vdW TiS3(1-:X)Se3x trichalcogenides. In: Nanoscale. 2018 ; Vol. 10, No. 33. pp. 15654-15660.
@article{a43b0d3c25dd44fc9247c9689ed8414a,
title = "Anomalous isoelectronic chalcogen rejection in 2D anisotropic vdW TiS3(1-:X)Se3x trichalcogenides",
abstract = "Alloying in semiconductors has enabled many civilian technologies in electronics, optoelectronics, photonics, and others. While the alloying phenomenon is well established in traditional bulk semiconductors owing to a vast array of available ternary phase diagrams, alloying in 2D materials still remains at its seminal stages. This is especially true for transition metal trichalcogenides (TMTCs) such as TiS3 which has been recently predicted to be a direct gap, high carrier mobility, pseudo-1D semiconductor. In this work, we report on an unusual alloying rejection behavior in TiS3(1-x)Se3x vdW crystals. TEM, SEM, EDS, and angle-resolved Raman measurements show that only a miniscule amount (8{\%}) of selenium can be successfully alloyed into a TiS3 host matrix despite vastly different precursor amounts as well as growth temperatures. This unusual behavior contrasts with other vdW systems such as TiS2(1-x)Se2x, MoS2(1-x)Se2x, Mo1-xWxS2, WS2(1-x)Se2x, where continuous alloying can be attained. Angle-resolved Raman and kelvin probe force microscopy measurements offer insights into how selenium alloying influences in-plane structural anisotropy as well as electron affinity values of exfoliated sheets. Our cluster expansion theory calculations show that only the alloys with a small amount of Se can be attained due to energetic instability above/below a certain selenium concentration threshold in the ternary phase diagrams. The overall findings highlight potential challenges in achieving stable Ti based TMTCs alloys.",
author = "Ashutosh Agarwal and Ying Qin and Bin Chen and Mark Blei and Kedi Wu and Lei Liu and Yuxia Shen and David Wright and Matthew Green and Houlong Zhuang and Sefaattin Tongay",
year = "2018",
month = "9",
day = "7",
doi = "10.1039/c8nr04274h",
language = "English (US)",
volume = "10",
pages = "15654--15660",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "33",

}

TY - JOUR

T1 - Anomalous isoelectronic chalcogen rejection in 2D anisotropic vdW TiS3(1-:X)Se3x trichalcogenides

AU - Agarwal, Ashutosh

AU - Qin, Ying

AU - Chen, Bin

AU - Blei, Mark

AU - Wu, Kedi

AU - Liu, Lei

AU - Shen, Yuxia

AU - Wright, David

AU - Green, Matthew

AU - Zhuang, Houlong

AU - Tongay, Sefaattin

PY - 2018/9/7

Y1 - 2018/9/7

N2 - Alloying in semiconductors has enabled many civilian technologies in electronics, optoelectronics, photonics, and others. While the alloying phenomenon is well established in traditional bulk semiconductors owing to a vast array of available ternary phase diagrams, alloying in 2D materials still remains at its seminal stages. This is especially true for transition metal trichalcogenides (TMTCs) such as TiS3 which has been recently predicted to be a direct gap, high carrier mobility, pseudo-1D semiconductor. In this work, we report on an unusual alloying rejection behavior in TiS3(1-x)Se3x vdW crystals. TEM, SEM, EDS, and angle-resolved Raman measurements show that only a miniscule amount (8%) of selenium can be successfully alloyed into a TiS3 host matrix despite vastly different precursor amounts as well as growth temperatures. This unusual behavior contrasts with other vdW systems such as TiS2(1-x)Se2x, MoS2(1-x)Se2x, Mo1-xWxS2, WS2(1-x)Se2x, where continuous alloying can be attained. Angle-resolved Raman and kelvin probe force microscopy measurements offer insights into how selenium alloying influences in-plane structural anisotropy as well as electron affinity values of exfoliated sheets. Our cluster expansion theory calculations show that only the alloys with a small amount of Se can be attained due to energetic instability above/below a certain selenium concentration threshold in the ternary phase diagrams. The overall findings highlight potential challenges in achieving stable Ti based TMTCs alloys.

AB - Alloying in semiconductors has enabled many civilian technologies in electronics, optoelectronics, photonics, and others. While the alloying phenomenon is well established in traditional bulk semiconductors owing to a vast array of available ternary phase diagrams, alloying in 2D materials still remains at its seminal stages. This is especially true for transition metal trichalcogenides (TMTCs) such as TiS3 which has been recently predicted to be a direct gap, high carrier mobility, pseudo-1D semiconductor. In this work, we report on an unusual alloying rejection behavior in TiS3(1-x)Se3x vdW crystals. TEM, SEM, EDS, and angle-resolved Raman measurements show that only a miniscule amount (8%) of selenium can be successfully alloyed into a TiS3 host matrix despite vastly different precursor amounts as well as growth temperatures. This unusual behavior contrasts with other vdW systems such as TiS2(1-x)Se2x, MoS2(1-x)Se2x, Mo1-xWxS2, WS2(1-x)Se2x, where continuous alloying can be attained. Angle-resolved Raman and kelvin probe force microscopy measurements offer insights into how selenium alloying influences in-plane structural anisotropy as well as electron affinity values of exfoliated sheets. Our cluster expansion theory calculations show that only the alloys with a small amount of Se can be attained due to energetic instability above/below a certain selenium concentration threshold in the ternary phase diagrams. The overall findings highlight potential challenges in achieving stable Ti based TMTCs alloys.

UR - http://www.scopus.com/inward/record.url?scp=85052524579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052524579&partnerID=8YFLogxK

U2 - 10.1039/c8nr04274h

DO - 10.1039/c8nr04274h

M3 - Article

AN - SCOPUS:85052524579

VL - 10

SP - 15654

EP - 15660

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 33

ER -