Anomalous field enhancement in planar semiconducting cold cathodes from spontaneous ordering in the accumulation region

G. L. Bilbro, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Wide band gap semiconductors exhibit a low electron affinity and may prove suitable for cold cathode applications. We introduce a simple closed-form analytic approximation for the stability of electrons in the electron accumulation layer of planar Low Electron Affinity (LEA) semiconducting cathodes. This analysis extends our previous results, which used Runge-Kutta numerical integration of the linearized equations of motion for the electric potential and quasi Fermi level. The model shows conditions in which the electrons in the accumulation layer form a two dimensional array of regions of higher and lower electron density. This instability could lead to field enhancement without surface roughness and could account for observed electron emission at low applied fields.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsK.L. Jensen, R.J. Nemanich, P. Holloway, T. Trottier, W. Mackie
Volume621
StatePublished - 2000
Externally publishedYes
EventElectron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays - San Francisco, CA, United States
Duration: Apr 25 2000Apr 27 2000

Other

OtherElectron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays
CountryUnited States
CitySan Francisco, CA
Period4/25/004/27/00

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Bilbro, G. L., & Nemanich, R. (2000). Anomalous field enhancement in planar semiconducting cold cathodes from spontaneous ordering in the accumulation region. In K. L. Jensen, R. J. Nemanich, P. Holloway, T. Trottier, & W. Mackie (Eds.), Materials Research Society Symposium - Proceedings (Vol. 621)