Abstract
Discussed are: the annealing of As-implanted single crystal Si in which the dose is sufficient to amorphize the crystal; the annealing of B-implanted single crystal Si in which the dose is insufficient to drive the crystal amorphous; and the annealing of polycrystalline Si doped by both implantation and thermal diffusion. A recrystallization model is presented for the As implantation case.
Original language | English (US) |
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Pages (from-to) | 195-201 |
Number of pages | 7 |
Journal | Radiation effects |
Volume | 48 |
Issue number | 1-4 |
State | Published - Jan 1 1978 |
Externally published | Yes |
Event | Proc of the Int Conf on Ion Beam Modif of Mater - Budapest, Hung Duration: Sep 4 1978 → Sep 8 1978 |
ASJC Scopus subject areas
- General Engineering