ANNEALING OF ION-IMPLANTED Si USING A SCANNED cw LASER SYSTEM.

A. Gat, L. Gerzberg, J. F. Gibbons, A. Lietoila, N. Johnson, T. J. Magee, J. Peng, V. Deline, Peter Williams, C. A. Evans

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Discussed are: the annealing of As-implanted single crystal Si in which the dose is sufficient to amorphize the crystal; the annealing of B-implanted single crystal Si in which the dose is insufficient to drive the crystal amorphous; and the annealing of polycrystalline Si doped by both implantation and thermal diffusion. A recrystallization model is presented for the As implantation case.

Original languageEnglish (US)
Pages (from-to)195-201
Number of pages7
JournalRadiation Effects
Volume48
Issue number1-4
StatePublished - 1978
Externally publishedYes

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Annealing
annealing
implantation
Single crystals
dosage
Crystals
Thermal diffusion
single crystals
thermal diffusion
crystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Gat, A., Gerzberg, L., Gibbons, J. F., Lietoila, A., Johnson, N., Magee, T. J., ... Evans, C. A. (1978). ANNEALING OF ION-IMPLANTED Si USING A SCANNED cw LASER SYSTEM. Radiation Effects, 48(1-4), 195-201.

ANNEALING OF ION-IMPLANTED Si USING A SCANNED cw LASER SYSTEM. / Gat, A.; Gerzberg, L.; Gibbons, J. F.; Lietoila, A.; Johnson, N.; Magee, T. J.; Peng, J.; Deline, V.; Williams, Peter; Evans, C. A.

In: Radiation Effects, Vol. 48, No. 1-4, 1978, p. 195-201.

Research output: Contribution to journalArticle

Gat, A, Gerzberg, L, Gibbons, JF, Lietoila, A, Johnson, N, Magee, TJ, Peng, J, Deline, V, Williams, P & Evans, CA 1978, 'ANNEALING OF ION-IMPLANTED Si USING A SCANNED cw LASER SYSTEM.', Radiation Effects, vol. 48, no. 1-4, pp. 195-201.
Gat A, Gerzberg L, Gibbons JF, Lietoila A, Johnson N, Magee TJ et al. ANNEALING OF ION-IMPLANTED Si USING A SCANNED cw LASER SYSTEM. Radiation Effects. 1978;48(1-4):195-201.
Gat, A. ; Gerzberg, L. ; Gibbons, J. F. ; Lietoila, A. ; Johnson, N. ; Magee, T. J. ; Peng, J. ; Deline, V. ; Williams, Peter ; Evans, C. A. / ANNEALING OF ION-IMPLANTED Si USING A SCANNED cw LASER SYSTEM. In: Radiation Effects. 1978 ; Vol. 48, No. 1-4. pp. 195-201.
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AU - Lietoila, A.

AU - Johnson, N.

AU - Magee, T. J.

AU - Peng, J.

AU - Deline, V.

AU - Williams, Peter

AU - Evans, C. A.

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