ANNEALING OF ION-IMPLANTED Si USING A SCANNED cw LASER SYSTEM.

A. Gat, L. Gerzberg, J. F. Gibbons, A. Lietoila, N. Johnson, T. J. Magee, J. Peng, V. Deline, P. Williams, C. A. Evans

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Discussed are: the annealing of As-implanted single crystal Si in which the dose is sufficient to amorphize the crystal; the annealing of B-implanted single crystal Si in which the dose is insufficient to drive the crystal amorphous; and the annealing of polycrystalline Si doped by both implantation and thermal diffusion. A recrystallization model is presented for the As implantation case.

Original languageEnglish (US)
Pages (from-to)195-201
Number of pages7
JournalRadiation effects
Volume48
Issue number1-4
StatePublished - Jan 1 1978
Externally publishedYes
EventProc of the Int Conf on Ion Beam Modif of Mater - Budapest, Hung
Duration: Sep 4 1978Sep 8 1978

ASJC Scopus subject areas

  • Engineering(all)

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    Gat, A., Gerzberg, L., Gibbons, J. F., Lietoila, A., Johnson, N., Magee, T. J., Peng, J., Deline, V., Williams, P., & Evans, C. A. (1978). ANNEALING OF ION-IMPLANTED Si USING A SCANNED cw LASER SYSTEM. Radiation effects, 48(1-4), 195-201.