ANNEALING OF INTIMATE Au-GaAs SCHOTTKY BARRIERS

THICK AND ULTRATHIN METAL FILMS.

Nathan Newman, W. G. Petro, T. Kendelewicz, S. H. Pan, S. J. Eglash, W. E. Spicer

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Using valence-band and core-level photoemission spectroscopy (PES) and electrical device measurements, the effects of annealing on Au:n-type (110) GaAs Schottky diodes fabricated in ultrahigh vacuum have been studied. Similar trends in the annealing-induced changes in the barrier height of Au:n-type GaAs were found for 0. 2 and 15 monolayer coverages as determined by PES and for thick film coverages (1000 A) as determined by current-voltage (I-V) and capacitance-voltage (C-V) measurement techniques. In each case, the barrier height was found to be stable for temperatures between 30 and 200 degree C and between 300 and 500 degree C; while a gradual decrease in the barrier height was found for annealing temperatures of 200-300 degree C. These changes are correlated with the formation of a Au-Ga rich layer at the interface during anneals at 200 to 300 degree C.

Original languageEnglish (US)
Pages (from-to)1247-1251
Number of pages5
JournalJournal of Applied Physics
Volume57
Issue number4
DOIs
StatePublished - Jan 1 1985
Externally publishedYes

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metal films
annealing
photoelectric emission
Schottky diodes
electrical measurement
spectroscopy
ultrahigh vacuum
thick films
capacitance
valence
trends
temperature
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Newman, N., Petro, W. G., Kendelewicz, T., Pan, S. H., Eglash, S. J., & Spicer, W. E. (1985). ANNEALING OF INTIMATE Au-GaAs SCHOTTKY BARRIERS: THICK AND ULTRATHIN METAL FILMS. Journal of Applied Physics, 57(4), 1247-1251. https://doi.org/10.1063/1.334521

ANNEALING OF INTIMATE Au-GaAs SCHOTTKY BARRIERS : THICK AND ULTRATHIN METAL FILMS. / Newman, Nathan; Petro, W. G.; Kendelewicz, T.; Pan, S. H.; Eglash, S. J.; Spicer, W. E.

In: Journal of Applied Physics, Vol. 57, No. 4, 01.01.1985, p. 1247-1251.

Research output: Contribution to journalArticle

Newman, N, Petro, WG, Kendelewicz, T, Pan, SH, Eglash, SJ & Spicer, WE 1985, 'ANNEALING OF INTIMATE Au-GaAs SCHOTTKY BARRIERS: THICK AND ULTRATHIN METAL FILMS.', Journal of Applied Physics, vol. 57, no. 4, pp. 1247-1251. https://doi.org/10.1063/1.334521
Newman, Nathan ; Petro, W. G. ; Kendelewicz, T. ; Pan, S. H. ; Eglash, S. J. ; Spicer, W. E. / ANNEALING OF INTIMATE Au-GaAs SCHOTTKY BARRIERS : THICK AND ULTRATHIN METAL FILMS. In: Journal of Applied Physics. 1985 ; Vol. 57, No. 4. pp. 1247-1251.
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