Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers

Nathan Newman, K. K. Chin, W. G. Petro, T. Kendelewicz, M. D. Williams, C. E. McCants, W. E. Spicer

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Using valence-band and core-level photoemission spectroscopy (PES) and electrical device measurements, the effects of annealing Ag, Al, and Au on n-type (110)GaAs Schottky diodes fabricated in ultrahigh vacuum have been studied. PES was used to monitor the annealing-induced changes in the interface Fermi level position and the chemical nature of the metal-semiconductor interface for submonolayer and several monolayer coverages. Barrier height determinations were also performed using current-voltage (/-F) and capacitance-voltage (C-V) device measurements on annealed thick metal film metal-semiconductor junctions. The results of this study show that the annealing-induced microscopic changes in the electronic and chemical structure of the metal-semiconductor interface can be strongly correlated with the macroscopic changes in the electrical properties of thick film metal-semiconductor Schottkv diodes.

Original languageEnglish (US)
Pages (from-to)996-1001
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume3
Issue number3
DOIs
StatePublished - 1985
Externally publishedYes

Fingerprint

Metals
Annealing
annealing
metals
Photoelectron spectroscopy
photoelectric emission
semiconductor junctions
semiconductor diodes
Semiconductor junctions
Semiconductor materials
electric potential
Semiconductor diodes
Schottky diodes
metal films
Core levels
spectroscopy
ultrahigh vacuum
thick films
Ultrahigh vacuum
Electric potential

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Newman, N., Chin, K. K., Petro, W. G., Kendelewicz, T., Williams, M. D., McCants, C. E., & Spicer, W. E. (1985). Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 3(3), 996-1001. https://doi.org/10.1116/1.573374

Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers. / Newman, Nathan; Chin, K. K.; Petro, W. G.; Kendelewicz, T.; Williams, M. D.; McCants, C. E.; Spicer, W. E.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 3, No. 3, 1985, p. 996-1001.

Research output: Contribution to journalArticle

Newman, N, Chin, KK, Petro, WG, Kendelewicz, T, Williams, MD, McCants, CE & Spicer, WE 1985, 'Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 3, no. 3, pp. 996-1001. https://doi.org/10.1116/1.573374
Newman, Nathan ; Chin, K. K. ; Petro, W. G. ; Kendelewicz, T. ; Williams, M. D. ; McCants, C. E. ; Spicer, W. E. / Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1985 ; Vol. 3, No. 3. pp. 996-1001.
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