The three coarsening mechanisms in Ge/Si(100) system: Ostwald ripening, Si interdiffusion and wetting layer consumption were discussed. It was found that Ge/Si(100) islands coarsened during in situ annealing at growth temperature. Molecular-beam epitaxy technique was used for the growth of islands of pure Ge and annealed at substrate temperatures of T = 450, 550, 600 and 650°C, with Ge coverages of 6.5, 8.0 and 9.5 monolayers.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Applied Physics|
|State||Published - Jun 15 2003|
ASJC Scopus subject areas
- Physics and Astronomy(all)