Annealing-induced Ge/Si(100) island evolution

Yangting Zhang; Jeffery Drucker

doi:10.1063/1.1575914

Annealing-induced Ge/Si(100) island evolution

Yangting Zhang, Jeffery Drucker

Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The three coarsening mechanisms in Ge/Si(100) system: Ostwald ripening, Si interdiffusion and wetting layer consumption were discussed. It was found that Ge/Si(100) islands coarsened during in situ annealing at growth temperature. Molecular-beam epitaxy technique was used for the growth of islands of pure Ge and annealed at substrate temperatures of T = 450, 550, 600 and 650°C, with Ge coverages of 6.5, 8.0 and 9.5 monolayers.

Original language	English (US)
Pages (from-to)	9583-9590
Number of pages	8
Journal	Journal of Applied Physics
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.1575914
State	Published - Jun 15 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1575914

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title = "Annealing-induced Ge/Si(100) island evolution",

abstract = "The three coarsening mechanisms in Ge/Si(100) system: Ostwald ripening, Si interdiffusion and wetting layer consumption were discussed. It was found that Ge/Si(100) islands coarsened during in situ annealing at growth temperature. Molecular-beam epitaxy technique was used for the growth of islands of pure Ge and annealed at substrate temperatures of T = 450, 550, 600 and 650°C, with Ge coverages of 6.5, 8.0 and 9.5 monolayers.",

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AU - Drucker, Jeffery

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AB - The three coarsening mechanisms in Ge/Si(100) system: Ostwald ripening, Si interdiffusion and wetting layer consumption were discussed. It was found that Ge/Si(100) islands coarsened during in situ annealing at growth temperature. Molecular-beam epitaxy technique was used for the growth of islands of pure Ge and annealed at substrate temperatures of T = 450, 550, 600 and 650°C, with Ge coverages of 6.5, 8.0 and 9.5 monolayers.

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JF - Journal of Applied Physics

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Annealing-induced Ge/Si(100) island evolution

Abstract

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