Annealing-induced Ge/Si(100) island evolution

Yangting Zhang, Jeffery Drucker

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The three coarsening mechanisms in Ge/Si(100) system: Ostwald ripening, Si interdiffusion and wetting layer consumption were discussed. It was found that Ge/Si(100) islands coarsened during in situ annealing at growth temperature. Molecular-beam epitaxy technique was used for the growth of islands of pure Ge and annealed at substrate temperatures of T = 450, 550, 600 and 650°C, with Ge coverages of 6.5, 8.0 and 9.5 monolayers.

Original languageEnglish (US)
Pages (from-to)9583-9590
Number of pages8
JournalJournal of Applied Physics
Volume93
Issue number12
DOIs
StatePublished - Jun 15 2003

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annealing
Ostwald ripening
wetting
molecular beam epitaxy
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Annealing-induced Ge/Si(100) island evolution. / Zhang, Yangting; Drucker, Jeffery.

In: Journal of Applied Physics, Vol. 93, No. 12, 15.06.2003, p. 9583-9590.

Research output: Contribution to journalArticle

Zhang, Yangting ; Drucker, Jeffery. / Annealing-induced Ge/Si(100) island evolution. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 12. pp. 9583-9590.
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