Annealing-induced Ge/Si(100) island evolution

Yangting Zhang, Jeffery Drucker

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Abstract

The three coarsening mechanisms in Ge/Si(100) system: Ostwald ripening, Si interdiffusion and wetting layer consumption were discussed. It was found that Ge/Si(100) islands coarsened during in situ annealing at growth temperature. Molecular-beam epitaxy technique was used for the growth of islands of pure Ge and annealed at substrate temperatures of T = 450, 550, 600 and 650°C, with Ge coverages of 6.5, 8.0 and 9.5 monolayers.

Original languageEnglish (US)
Pages (from-to)9583-9590
Number of pages8
JournalJournal of Applied Physics
Volume93
Issue number12
DOIs
StatePublished - Jun 15 2003

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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