Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies

J. D. Oberstar, B. G. Streetman, J. E. Baker, N. L. Finnegan, E. A. Sammann, Peter Williams

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Using Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) we examined the InP encapsulation properties of chemically vapor-deposited SiO2, chemically vapor-deposited phosphosilicate glass (PSG) and r.f.-plasma-deposited Si3N4. Following 60 min 750°C anneals, indium is detected by both AES and SIMS on the surfaces of Si3N4 encapsulants. SIMS results also suggest that indium may out-diffuse through PSG caps during similar anneals. Silicon in-diffusion from the cap to the underlying InP is found to be significant in annealed SiO2-and Si3N4-capped samples. Little such silicon contamination of InP is observed after annealing with PSG encapsulation.

Original languageEnglish (US)
Pages (from-to)149-159
Number of pages11
JournalThin Solid Films
Volume94
Issue number2
DOIs
StatePublished - Aug 13 1982
Externally publishedYes

Fingerprint

Secondary ion mass spectrometry
secondary ion mass spectrometry
Indium
Silicon
Auger electron spectroscopy
Annealing
Ions
Encapsulation
caps
Glass
Auger spectroscopy
annealing
electron spectroscopy
indium
Electrons
glass
Vapors
vapors
ions
electrons

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Annealing encapsulants for InP I : Auger electron and secondary ion mass spectrometric studies. / Oberstar, J. D.; Streetman, B. G.; Baker, J. E.; Finnegan, N. L.; Sammann, E. A.; Williams, Peter.

In: Thin Solid Films, Vol. 94, No. 2, 13.08.1982, p. 149-159.

Research output: Contribution to journalArticle

Oberstar, J. D. ; Streetman, B. G. ; Baker, J. E. ; Finnegan, N. L. ; Sammann, E. A. ; Williams, Peter. / Annealing encapsulants for InP I : Auger electron and secondary ion mass spectrometric studies. In: Thin Solid Films. 1982 ; Vol. 94, No. 2. pp. 149-159.
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