Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies

J. D. Oberstar; B. G. Streetman; J. E. Baker; N. L. Finnegan; E. A. Sammann; Peter Williams

doi:10.1016/0040-6090(82)90507-7

Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies

J. D. Oberstar, B. G. Streetman, J. E. Baker, N. L. Finnegan, E. A. Sammann, Peter Williams

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Using Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) we examined the InP encapsulation properties of chemically vapor-deposited SiO₂, chemically vapor-deposited phosphosilicate glass (PSG) and r.f.-plasma-deposited Si₃N₄. Following 60 min 750°C anneals, indium is detected by both AES and SIMS on the surfaces of Si₃N₄ encapsulants. SIMS results also suggest that indium may out-diffuse through PSG caps during similar anneals. Silicon in-diffusion from the cap to the underlying InP is found to be significant in annealed SiO₂-and Si₃N₄-capped samples. Little such silicon contamination of InP is observed after annealing with PSG encapsulation.

Original language	English (US)
Pages (from-to)	149-159
Number of pages	11
Journal	Thin Solid Films
Volume	94
Issue number	2
DOIs	https://doi.org/10.1016/0040-6090(82)90507-7
State	Published - Aug 13 1982
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(82)90507-7

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@article{7452591c85d042fa85c31e71edb38b20,

title = "Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies",

abstract = "Using Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) we examined the InP encapsulation properties of chemically vapor-deposited SiO2, chemically vapor-deposited phosphosilicate glass (PSG) and r.f.-plasma-deposited Si3N4. Following 60 min 750°C anneals, indium is detected by both AES and SIMS on the surfaces of Si3N4 encapsulants. SIMS results also suggest that indium may out-diffuse through PSG caps during similar anneals. Silicon in-diffusion from the cap to the underlying InP is found to be significant in annealed SiO2-and Si3N4-capped samples. Little such silicon contamination of InP is observed after annealing with PSG encapsulation.",

author = "Oberstar, {J. D.} and Streetman, {B. G.} and Baker, {J. E.} and Finnegan, {N. L.} and Sammann, {E. A.} and Peter Williams",

note = "Funding Information: This work was supported by the Office of Naval Research under Contract N00014-76-C-080t6h, e Joint ServicesE lectronicsP rogram (U.S. Army, U S Navy and U.S. Air Force) under Contract N00014-79-C-042a4n d by NSF MRL Grant DMR-77-23999.",

year = "1982",

month = aug,

day = "13",

doi = "10.1016/0040-6090(82)90507-7",

language = "English (US)",

volume = "94",

pages = "149--159",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "2",

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TY - JOUR

T1 - Annealing encapsulants for InP I

T2 - Auger electron and secondary ion mass spectrometric studies

AU - Oberstar, J. D.

AU - Streetman, B. G.

AU - Baker, J. E.

AU - Finnegan, N. L.

AU - Sammann, E. A.

AU - Williams, Peter

N1 - Funding Information: This work was supported by the Office of Naval Research under Contract N00014-76-C-080t6h, e Joint ServicesE lectronicsP rogram (U.S. Army, U S Navy and U.S. Air Force) under Contract N00014-79-C-042a4n d by NSF MRL Grant DMR-77-23999.

PY - 1982/8/13

Y1 - 1982/8/13

N2 - Using Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) we examined the InP encapsulation properties of chemically vapor-deposited SiO2, chemically vapor-deposited phosphosilicate glass (PSG) and r.f.-plasma-deposited Si3N4. Following 60 min 750°C anneals, indium is detected by both AES and SIMS on the surfaces of Si3N4 encapsulants. SIMS results also suggest that indium may out-diffuse through PSG caps during similar anneals. Silicon in-diffusion from the cap to the underlying InP is found to be significant in annealed SiO2-and Si3N4-capped samples. Little such silicon contamination of InP is observed after annealing with PSG encapsulation.

AB - Using Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) we examined the InP encapsulation properties of chemically vapor-deposited SiO2, chemically vapor-deposited phosphosilicate glass (PSG) and r.f.-plasma-deposited Si3N4. Following 60 min 750°C anneals, indium is detected by both AES and SIMS on the surfaces of Si3N4 encapsulants. SIMS results also suggest that indium may out-diffuse through PSG caps during similar anneals. Silicon in-diffusion from the cap to the underlying InP is found to be significant in annealed SiO2-and Si3N4-capped samples. Little such silicon contamination of InP is observed after annealing with PSG encapsulation.

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DO - 10.1016/0040-6090(82)90507-7

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SN - 0040-6090

VL - 94

SP - 149

EP - 159

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies

Abstract

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