Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies

J. D. Oberstar, B. G. Streetman, J. E. Baker, N. L. Finnegan, E. A. Sammann, Peter Williams

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Using Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) we examined the InP encapsulation properties of chemically vapor-deposited SiO2, chemically vapor-deposited phosphosilicate glass (PSG) and r.f.-plasma-deposited Si3N4. Following 60 min 750°C anneals, indium is detected by both AES and SIMS on the surfaces of Si3N4 encapsulants. SIMS results also suggest that indium may out-diffuse through PSG caps during similar anneals. Silicon in-diffusion from the cap to the underlying InP is found to be significant in annealed SiO2-and Si3N4-capped samples. Little such silicon contamination of InP is observed after annealing with PSG encapsulation.

Original languageEnglish (US)
Pages (from-to)149-159
Number of pages11
JournalThin Solid Films
Volume94
Issue number2
DOIs
StatePublished - Aug 13 1982
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Annealing encapsulants for InP I: Auger electron and secondary ion mass spectrometric studies'. Together they form a unique fingerprint.

  • Cite this