Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74

Chaker Fares, Minghan Xian, David J. Smith, M. R. McCartney, Max Kneiß, Holger Von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S. J. Pearton

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Engineering & Materials Science

Chemical Compounds