TY - JOUR
T1 - Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74
AU - Fares, Chaker
AU - Xian, Minghan
AU - Smith, David J.
AU - McCartney, M. R.
AU - Kneiß, Max
AU - Von Wenckstern, Holger
AU - Grundmann, Marius
AU - Tadjer, Marko
AU - Ren, Fan
AU - Pearton, S. J.
N1 - Publisher Copyright:
© 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
PY - 2020/1/5
Y1 - 2020/1/5
N2 - The band alignment of Atomic Layer Deposited SiO2 on (InxGa1-x)2O3 at varying indium concentrations is reported before and after annealing at 450 C and 600 C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in higherature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 C annealing. The decrease in VBO was -0.35 eV for (In0.25Ga0.75)2O3, -0.45 eV for (In0.42Ga0.58)2O3, -0.40 eV for (In0.60Ga0.40)2O3, and -0.35 eV (In0.74Ga0.26)2O3 for 450 C annealing. After annealing at 600 C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the offsets after the 450 C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface. Even after annealing up to 600 C, the band alignment remains type I (nested gap) for all indium compositions of (InxGa1-x)2O3 studied.
AB - The band alignment of Atomic Layer Deposited SiO2 on (InxGa1-x)2O3 at varying indium concentrations is reported before and after annealing at 450 C and 600 C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in higherature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 C annealing. The decrease in VBO was -0.35 eV for (In0.25Ga0.75)2O3, -0.45 eV for (In0.42Ga0.58)2O3, -0.40 eV for (In0.60Ga0.40)2O3, and -0.35 eV (In0.74Ga0.26)2O3 for 450 C annealing. After annealing at 600 C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the offsets after the 450 C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface. Even after annealing up to 600 C, the band alignment remains type I (nested gap) for all indium compositions of (InxGa1-x)2O3 studied.
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U2 - 10.1149/2162-8777/ab8364
DO - 10.1149/2162-8777/ab8364
M3 - Article
AN - SCOPUS:85085262554
SN - 2162-8769
VL - 9
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 4
M1 - 045001
ER -