Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers

C. Y. Hung; J. S. Harris; A. F. Marshall; R. A. Kiehl

doi:10.1063/1.121824

Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers

C. Y. Hung, J. S. Harris, A. F. Marshall, R. A. Kiehl

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6 Scopus citations

Abstract

The spatial distribution of arsenic precipitates formed in a nonstoichiometric AlGaAs/GaAs quantum well is examined for different annealing temperatures and times. Preferential precipitation in the GaAs layer of samples annealed at 600°C is found to be much weaker than in samples annealed at 850°C because of the reduced diffusion of arsenic at lower temperatures. Nevertheless, it is demonstrated that strong preferential precipitation is possible at low annealing temperatures, provided that the annealing time is sufficiently long. Limitations to the preferential precipitation process imposed by interface mixing and the decrease in gallium vacancy concentration during annealing are also examined.

Original language	English (US)
Pages (from-to)	330-332
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	3
DOIs	https://doi.org/10.1063/1.121824
State	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.121824

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title = "Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers",

abstract = "The spatial distribution of arsenic precipitates formed in a nonstoichiometric AlGaAs/GaAs quantum well is examined for different annealing temperatures and times. Preferential precipitation in the GaAs layer of samples annealed at 600°C is found to be much weaker than in samples annealed at 850°C because of the reduced diffusion of arsenic at lower temperatures. Nevertheless, it is demonstrated that strong preferential precipitation is possible at low annealing temperatures, provided that the annealing time is sufficiently long. Limitations to the preferential precipitation process imposed by interface mixing and the decrease in gallium vacancy concentration during annealing are also examined.",

author = "Hung, {C. Y.} and Harris, {J. S.} and Marshall, {A. F.} and Kiehl, {R. A.}",

year = "1998",

doi = "10.1063/1.121824",

language = "English (US)",

volume = "73",

pages = "330--332",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers

AU - Hung, C. Y.

AU - Harris, J. S.

AU - Marshall, A. F.

AU - Kiehl, R. A.

PY - 1998

Y1 - 1998

N2 - The spatial distribution of arsenic precipitates formed in a nonstoichiometric AlGaAs/GaAs quantum well is examined for different annealing temperatures and times. Preferential precipitation in the GaAs layer of samples annealed at 600°C is found to be much weaker than in samples annealed at 850°C because of the reduced diffusion of arsenic at lower temperatures. Nevertheless, it is demonstrated that strong preferential precipitation is possible at low annealing temperatures, provided that the annealing time is sufficiently long. Limitations to the preferential precipitation process imposed by interface mixing and the decrease in gallium vacancy concentration during annealing are also examined.

AB - The spatial distribution of arsenic precipitates formed in a nonstoichiometric AlGaAs/GaAs quantum well is examined for different annealing temperatures and times. Preferential precipitation in the GaAs layer of samples annealed at 600°C is found to be much weaker than in samples annealed at 850°C because of the reduced diffusion of arsenic at lower temperatures. Nevertheless, it is demonstrated that strong preferential precipitation is possible at low annealing temperatures, provided that the annealing time is sufficiently long. Limitations to the preferential precipitation process imposed by interface mixing and the decrease in gallium vacancy concentration during annealing are also examined.

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DO - 10.1063/1.121824

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SP - 330

EP - 332

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers

Abstract

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