Annealing and Hydrogenation of GaNP Lattice Matched to Si

Nicholas P. Irvin; Hadi Afshari; Chaomin Zhang; Srinath Murali; Daniel Peirano Petit; Abhinav Chikhalkar; Khalid Hossain; Chris T. Gregory; Richard R. King; Ian R. Sellers; Christiana B. Honsberg

doi:10.1109/PVSC43889.2021.9519099

Annealing and Hydrogenation of GaNP Lattice Matched to Si

Nicholas P. Irvin, Hadi Afshari, Chaomin Zhang, Srinath Murali, Daniel Peirano Petit, Abhinav Chikhalkar, Khalid Hossain, Chris T. Gregory, Richard R. King, Ian R. Sellers, Christiana B. Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

GaN0.02P0.98 is a promising top junction material for a Si-based tandem solar cell, offering the correct lattice constant and bandgap for an optimal three-terminal device. A key challenge for dilute nitride materials is achieving sufficiently high carrier lifetimes. This paper presents a detailed investigation of the carrier lifetimes in GaNP lattice matched to Si as well as a novel hydrogenation treatment. The lifetimes are over 20 ns at 10K, but the TRPL signal becomes undetectable at 140K due to increased nonradiative recombination. While annealing boosts the carrier lifetime, subsequent hydrogenation was seen to neither increase nor decrease lifetime.

Original language	English (US)
Title of host publication	2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1855-1859
Number of pages	5
ISBN (Electronic)	9781665419222
DOIs	https://doi.org/10.1109/PVSC43889.2021.9519099
State	Published - Jun 20 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: Jun 20 2021 → Jun 25 2021

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	6/20/21 → 6/25/21

Keywords

GaNP
Si-based tandem solar cells
TRPL
annealing
dilute nitrides
hydrogenation

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC43889.2021.9519099

Cite this

Irvin, N. P., Afshari, H., Zhang, C., Murali, S., Peirano Petit, D., Chikhalkar, A., Hossain, K., Gregory, C. T., King, R. R., Sellers, I. R., & Honsberg, C. B. (2021). Annealing and Hydrogenation of GaNP Lattice Matched to Si. In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 (pp. 1855-1859). (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC43889.2021.9519099

Annealing and Hydrogenation of GaNP Lattice Matched to Si. / Irvin, Nicholas P.; Afshari, Hadi; Zhang, Chaomin et al.
2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 1855-1859 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Irvin, NP, Afshari, H, Zhang, C, Murali, S, Peirano Petit, D, Chikhalkar, A, Hossain, K, Gregory, CT, King, RR, Sellers, IR & Honsberg, CB 2021, Annealing and Hydrogenation of GaNP Lattice Matched to Si. in 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1855-1859, 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 6/20/21. https://doi.org/10.1109/PVSC43889.2021.9519099

Irvin NP, Afshari H, Zhang C, Murali S, Peirano Petit D, Chikhalkar A et al. Annealing and Hydrogenation of GaNP Lattice Matched to Si. In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 1855-1859. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC43889.2021.9519099

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abstract = "GaN0.02P0.98 is a promising top junction material for a Si-based tandem solar cell, offering the correct lattice constant and bandgap for an optimal three-terminal device. A key challenge for dilute nitride materials is achieving sufficiently high carrier lifetimes. This paper presents a detailed investigation of the carrier lifetimes in GaNP lattice matched to Si as well as a novel hydrogenation treatment. The lifetimes are over 20 ns at 10K, but the TRPL signal becomes undetectable at 140K due to increased nonradiative recombination. While annealing boosts the carrier lifetime, subsequent hydrogenation was seen to neither increase nor decrease lifetime.",

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author = "Irvin, {Nicholas P.} and Hadi Afshari and Chaomin Zhang and Srinath Murali and {Peirano Petit}, Daniel and Abhinav Chikhalkar and Khalid Hossain and Gregory, {Chris T.} and King, {Richard R.} and Sellers, {Ian R.} and Honsberg, {Christiana B.}",

note = "Funding Information: This work was primarily supported by the Engineering Research Center (ERC) Program of the National Science Foundation (NSF) and the Office of Energy Efficiency and Renewable Energy of the Department of Energy (DOE) under NSF Cooperative Agreement No. EEC-1041895. The authors acknowledge the use of facilities within the Eyring Materials Center at Arizona State University supported in part by No. NHCI-ECCS-1542160. The authors acknowledge resources and support from the Ultrafast Laser Facility, part of the Chemical and Environmental Characterization Core Facilities at Arizona State University. Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

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AU - Afshari, Hadi

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AU - Murali, Srinath

AU - Peirano Petit, Daniel

AU - Chikhalkar, Abhinav

AU - Hossain, Khalid

AU - Gregory, Chris T.

AU - King, Richard R.

AU - Sellers, Ian R.

AU - Honsberg, Christiana B.

N1 - Funding Information: This work was primarily supported by the Engineering Research Center (ERC) Program of the National Science Foundation (NSF) and the Office of Energy Efficiency and Renewable Energy of the Department of Energy (DOE) under NSF Cooperative Agreement No. EEC-1041895. The authors acknowledge the use of facilities within the Eyring Materials Center at Arizona State University supported in part by No. NHCI-ECCS-1542160. The authors acknowledge resources and support from the Ultrafast Laser Facility, part of the Chemical and Environmental Characterization Core Facilities at Arizona State University. Publisher Copyright: © 2021 IEEE.

PY - 2021/6/20

Y1 - 2021/6/20

N2 - GaN0.02P0.98 is a promising top junction material for a Si-based tandem solar cell, offering the correct lattice constant and bandgap for an optimal three-terminal device. A key challenge for dilute nitride materials is achieving sufficiently high carrier lifetimes. This paper presents a detailed investigation of the carrier lifetimes in GaNP lattice matched to Si as well as a novel hydrogenation treatment. The lifetimes are over 20 ns at 10K, but the TRPL signal becomes undetectable at 140K due to increased nonradiative recombination. While annealing boosts the carrier lifetime, subsequent hydrogenation was seen to neither increase nor decrease lifetime.

AB - GaN0.02P0.98 is a promising top junction material for a Si-based tandem solar cell, offering the correct lattice constant and bandgap for an optimal three-terminal device. A key challenge for dilute nitride materials is achieving sufficiently high carrier lifetimes. This paper presents a detailed investigation of the carrier lifetimes in GaNP lattice matched to Si as well as a novel hydrogenation treatment. The lifetimes are over 20 ns at 10K, but the TRPL signal becomes undetectable at 140K due to increased nonradiative recombination. While annealing boosts the carrier lifetime, subsequent hydrogenation was seen to neither increase nor decrease lifetime.

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Annealing and Hydrogenation of GaNP Lattice Matched to Si

Abstract

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Keywords

ASJC Scopus subject areas

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