Anisotropy effects on the electronic transport in photoexcited GaAs

R. P. Joshi; S. El-Ghazaly; R. O. Grondin

doi:10.1063/1.344526

Anisotropy effects on the electronic transport in photoexcited GaAs

R. P. Joshi, S. El-Ghazaly, R. O. Grondin

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We investigate the effects of both carrier and phonon k-space anisotropy on the transport in bulk GaAs photoconductors. Our results show that photogeneration by laser pulses polarized perpendicular to the electric field can delay the initial velocity rise. Furthermore, anisotropic phonon amplification can degrade the turn-off characteristics. Finally, unlike n-doped semiconductors, we find that the steady-state velocity-field values in photoconductors are reduced because of the nonequilibrium phonon modes.

Original language	English (US)
Pages (from-to)	7388-7392
Number of pages	5
Journal	Journal of Applied Physics
Volume	67
Issue number	12
DOIs	https://doi.org/10.1063/1.344526
State	Published - Dec 1 1990

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.344526

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title = "Anisotropy effects on the electronic transport in photoexcited GaAs",

abstract = "We investigate the effects of both carrier and phonon k-space anisotropy on the transport in bulk GaAs photoconductors. Our results show that photogeneration by laser pulses polarized perpendicular to the electric field can delay the initial velocity rise. Furthermore, anisotropic phonon amplification can degrade the turn-off characteristics. Finally, unlike n-doped semiconductors, we find that the steady-state velocity-field values in photoconductors are reduced because of the nonequilibrium phonon modes.",

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AU - Grondin, R. O.

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Y1 - 1990/12/1

N2 - We investigate the effects of both carrier and phonon k-space anisotropy on the transport in bulk GaAs photoconductors. Our results show that photogeneration by laser pulses polarized perpendicular to the electric field can delay the initial velocity rise. Furthermore, anisotropic phonon amplification can degrade the turn-off characteristics. Finally, unlike n-doped semiconductors, we find that the steady-state velocity-field values in photoconductors are reduced because of the nonequilibrium phonon modes.

AB - We investigate the effects of both carrier and phonon k-space anisotropy on the transport in bulk GaAs photoconductors. Our results show that photogeneration by laser pulses polarized perpendicular to the electric field can delay the initial velocity rise. Furthermore, anisotropic phonon amplification can degrade the turn-off characteristics. Finally, unlike n-doped semiconductors, we find that the steady-state velocity-field values in photoconductors are reduced because of the nonequilibrium phonon modes.

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Anisotropy effects on the electronic transport in photoexcited GaAs

Abstract

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