Anisotropy effects on the electronic transport in photoexcited GaAs

R. P. Joshi; S. El-Ghazaly; R. O. Grondin

doi:10.1063/1.344526

Anisotropy effects on the electronic transport in photoexcited GaAs

R. P. Joshi, S. El-Ghazaly, R. O. Grondin

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the effects of both carrier and phonon k-space anisotropy on the transport in bulk GaAs photoconductors. Our results show that photogeneration by laser pulses polarized perpendicular to the electric field can delay the initial velocity rise. Furthermore, anisotropic phonon amplification can degrade the turn-off characteristics. Finally, unlike n-doped semiconductors, we find that the steady-state velocity-field values in photoconductors are reduced because of the nonequilibrium phonon modes.

Original language	English (US)
Pages (from-to)	7388-7392
Number of pages	5
Journal	Journal of Applied Physics
Volume	67
Issue number	12
DOIs	https://doi.org/10.1063/1.344526
State	Published - Dec 1 1990

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.344526

Cite this

@article{1944dd698670494b87be56397d64635b,

title = "Anisotropy effects on the electronic transport in photoexcited GaAs",

abstract = "We investigate the effects of both carrier and phonon k-space anisotropy on the transport in bulk GaAs photoconductors. Our results show that photogeneration by laser pulses polarized perpendicular to the electric field can delay the initial velocity rise. Furthermore, anisotropic phonon amplification can degrade the turn-off characteristics. Finally, unlike n-doped semiconductors, we find that the steady-state velocity-field values in photoconductors are reduced because of the nonequilibrium phonon modes.",

author = "Joshi, {R. P.} and S. El-Ghazaly and Grondin, {R. O.}",

year = "1990",

month = dec,

day = "1",

doi = "10.1063/1.344526",

language = "English (US)",

volume = "67",

pages = "7388--7392",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Anisotropy effects on the electronic transport in photoexcited GaAs

AU - Joshi, R. P.

AU - El-Ghazaly, S.

AU - Grondin, R. O.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - We investigate the effects of both carrier and phonon k-space anisotropy on the transport in bulk GaAs photoconductors. Our results show that photogeneration by laser pulses polarized perpendicular to the electric field can delay the initial velocity rise. Furthermore, anisotropic phonon amplification can degrade the turn-off characteristics. Finally, unlike n-doped semiconductors, we find that the steady-state velocity-field values in photoconductors are reduced because of the nonequilibrium phonon modes.

AB - We investigate the effects of both carrier and phonon k-space anisotropy on the transport in bulk GaAs photoconductors. Our results show that photogeneration by laser pulses polarized perpendicular to the electric field can delay the initial velocity rise. Furthermore, anisotropic phonon amplification can degrade the turn-off characteristics. Finally, unlike n-doped semiconductors, we find that the steady-state velocity-field values in photoconductors are reduced because of the nonequilibrium phonon modes.

UR - http://www.scopus.com/inward/record.url?scp=36549092406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549092406&partnerID=8YFLogxK

U2 - 10.1063/1.344526

DO - 10.1063/1.344526

M3 - Article

AN - SCOPUS:36549092406

SN - 0021-8979

VL - 67

SP - 7388

EP - 7392

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Anisotropy effects on the electronic transport in photoexcited GaAs

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this