Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well

L. Shi, C. D. Poweleit, Fernando Ponce, Jose Menendez, W. W. Chow

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on a photoluminescence (PL) study on pinholes and their effects on the carrier recombination process in an InGaN/GaN single quantum well sample. By directly imaging the luminescence from the sample, we observed an anisotropic distribution of photogenerated carriers due to diffusion and drift of the carriers near pinholes. The anisotropy, together with micro-PL spectra at different locations near a pinhole, shows evidence of narrowing of the band gap of the quantum well layer near pinholes. The existence of the band gap gradient is confirmed by reflective and photoluminescence images of the sample under global illumination, Possible causes of the band gap gradient include indium concentration inhomogeneity and partial strain relaxation near pinholes.

Original languageEnglish (US)
Pages (from-to)75-77
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number1
DOIs
StatePublished - Jul 2 2001

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pinholes
quantum wells
photoluminescence
gradients
indium
inhomogeneity
illumination
luminescence
anisotropy
causes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well. / Shi, L.; Poweleit, C. D.; Ponce, Fernando; Menendez, Jose; Chow, W. W.

In: Applied Physics Letters, Vol. 79, No. 1, 02.07.2001, p. 75-77.

Research output: Contribution to journalArticle

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