Anharmonic interactions in ZnO probed with impulsive stimulated Raman scattering

C. Aku-Leh, Jimin Zhao, R. Merlin, Jose Menendez, M. Cardona

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Impulsive stimulated Raman scattering studies of ZnO show a dramatic increase in the lifetime of the low-energy E2 optical phonon from 34 ps at 292 K to 211 ps at 5 K. The frequency of this mode at 5 K is (2.9789 ± 0.0002) THz, giving a quality factor Q ∼ 2000. The temperature-dependent lifetime is dominated by two-phonon up-conversion processes and, at low temperatures, the lifetime is limited by isotopic disorder.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages1228-1229
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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