Abstract

An analytical mapping for electron trapping in chalcogenide glass (ChG) films is derived which equates anion formation (dissolution) reactions and carrier-trap statistics. Glass binaries composed of chalcogen atoms contain high densities of negative charge that result from chemical reactions involving free electrons. This process of anion formation and dissolution between an electron and a neutral species is shown to be equivalent to standard models for carrier statistics. The derived equivalence reduces chemical reaction equations into statistics calculations performed through conventional semiconductor device simulation. The proposed mapping is shown to be valid for both equilibrium and steady state photogeneration conditions.

Original languageEnglish (US)
Pages (from-to)H29-H31
JournalECS Electrochemistry Letters
Volume4
Issue number7
DOIs
StatePublished - 2015

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Anions
Negative ions
Statistics
Glass
Electrons
Chemical reactions
Dissolution
Chalcogens
Semiconductor devices
Atoms

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Chemistry
  • Fuel Technology

Cite this

Analytical relationship between anion formation and carrier-trap statistics in chalcogenide glass films. / Saremi, M.; Barnaby, Hugh; Edwards, A.; Kozicki, Michael.

In: ECS Electrochemistry Letters, Vol. 4, No. 7, 2015, p. H29-H31.

Research output: Contribution to journalArticle

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