@inproceedings{b0175b1915ee4de2b443f4467d8c0485,
title = "Analytical model of radiation response in FDSOI MOSFETS",
abstract = "It was recently shown that band-to-band tunneling (BBT), in combination with trapped charge buildup in the buried oxide, affects the radiation response in some fully-depleted silicon-on-insulator (FDSOI) MOSFET technologies. In this paper, an analytical model for these radiation response characteristics is proposed. The charge coupling between the front and back gates is demonstrated analytically using closed-form expressions for the back-gate threshold voltage as a function of trapped charge in the buried oxide and front gate voltage.",
keywords = "Band-to-band tunneling, Buried oxide, Fully-depleted SOI, Oxide trapped charge, Total ionizing dose",
author = "McLain, {Michael L.} and Hugh Barnaby and Adell, {Philippe C.}",
year = "2008",
doi = "10.1109/RELPHY.2008.4558967",
language = "English (US)",
isbn = "9781424420506",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "643--644",
booktitle = "46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS",
note = "46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS ; Conference date: 27-04-2008 Through 01-05-2008",
}