Analytical model of radiation response in FDSOI MOSFETS

Michael L. McLain, Hugh Barnaby, Philippe C. Adell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

It was recently shown that band-to-band tunneling (BBT), in combination with trapped charge buildup in the buried oxide, affects the radiation response in some fully-depleted silicon-on-insulator (FDSOI) MOSFET technologies. In this paper, an analytical model for these radiation response characteristics is proposed. The charge coupling between the front and back gates is demonstrated analytically using closed-form expressions for the back-gate threshold voltage as a function of trapped charge in the buried oxide and front gate voltage.

Original languageEnglish (US)
Title of host publication46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages643-644
Number of pages2
DOIs
StatePublished - Sep 17 2008
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: Apr 27 2008May 1 2008

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
CountryUnited States
CityPhoenix, AZ
Period4/27/085/1/08

Keywords

  • Band-to-band tunneling
  • Buried oxide
  • Fully-depleted SOI
  • Oxide trapped charge
  • Total ionizing dose

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    McLain, M. L., Barnaby, H., & Adell, P. C. (2008). Analytical model of radiation response in FDSOI MOSFETS. In 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS (pp. 643-644). [4558967] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2008.4558967