Analytic potential model for asymmetricunderlap gate-all-around MOSFET

Shaodi Wang, Xinjie Guo, Lining Zhang, Chenfei Zhang, Zhiwei Liu, Guozeng Wang, Yang Zhang, Wen Wu, Xiaojin Zhao, Wenping Wang, Yu Cao, Yun Ye, Ruonan Wang, Yong Ma, Jin He

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An analytic potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed in this paper. This model is derived by solving the Poisson's equation with the parabolic potential approximation, channel length transformation and conformai mapping. The analytic body center potential solution is presented. Compared with TCAD simulations, the proposed model shows good agreements, with different dimensions of the structure and varied bias conditions. The model here is appropriate for predicting the effect of gate misalignment or asymmetric gate underlap in GAA MOSFETs' design.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages776-779
Number of pages4
Volume2
StatePublished - 2011
Externally publishedYes
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: Jun 13 2011Jun 16 2011

Other

OtherNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period6/13/116/16/11

Fingerprint

Poisson equation

Keywords

  • Asymmetric
  • Gale-all-around
  • Misalinment
  • Underlap

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Wang, S., Guo, X., Zhang, L., Zhang, C., Liu, Z., Wang, G., ... He, J. (2011). Analytic potential model for asymmetricunderlap gate-all-around MOSFET. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 (Vol. 2, pp. 776-779)

Analytic potential model for asymmetricunderlap gate-all-around MOSFET. / Wang, Shaodi; Guo, Xinjie; Zhang, Lining; Zhang, Chenfei; Liu, Zhiwei; Wang, Guozeng; Zhang, Yang; Wu, Wen; Zhao, Xiaojin; Wang, Wenping; Cao, Yu; Ye, Yun; Wang, Ruonan; Ma, Yong; He, Jin.

Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Vol. 2 2011. p. 776-779.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, S, Guo, X, Zhang, L, Zhang, C, Liu, Z, Wang, G, Zhang, Y, Wu, W, Zhao, X, Wang, W, Cao, Y, Ye, Y, Wang, R, Ma, Y & He, J 2011, Analytic potential model for asymmetricunderlap gate-all-around MOSFET. in Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. vol. 2, pp. 776-779, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, Boston, MA, United States, 6/13/11.
Wang S, Guo X, Zhang L, Zhang C, Liu Z, Wang G et al. Analytic potential model for asymmetricunderlap gate-all-around MOSFET. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Vol. 2. 2011. p. 776-779
Wang, Shaodi ; Guo, Xinjie ; Zhang, Lining ; Zhang, Chenfei ; Liu, Zhiwei ; Wang, Guozeng ; Zhang, Yang ; Wu, Wen ; Zhao, Xiaojin ; Wang, Wenping ; Cao, Yu ; Ye, Yun ; Wang, Ruonan ; Ma, Yong ; He, Jin. / Analytic potential model for asymmetricunderlap gate-all-around MOSFET. Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Vol. 2 2011. pp. 776-779
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abstract = "An analytic potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed in this paper. This model is derived by solving the Poisson's equation with the parabolic potential approximation, channel length transformation and conformai mapping. The analytic body center potential solution is presented. Compared with TCAD simulations, the proposed model shows good agreements, with different dimensions of the structure and varied bias conditions. The model here is appropriate for predicting the effect of gate misalignment or asymmetric gate underlap in GAA MOSFETs' design.",
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AU - Wu, Wen

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