Analytic modeling of transit-time device drift regions with field-dependent transport coefficients

P. J. McCleer; D. E. Snyder; R. O. Grondin; G. I. Haddad

doi:10.1016/0038-1101(81)90210-0

Analytic modeling of transit-time device drift regions with field-dependent transport coefficients

P. J. McCleer, D. E. Snyder, R. O. Grondin, G. I. Haddad

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

An iterative procedure for obtaining two-carrier d.c. solutions in regions of rapidly varying carrier concentration is presented. The procedure uses an analytic solution for the carrier concentrations in a region of linear spatial electric field variation. Field-dependent diffusion and field-dependent velocities are assumed. A single-carrier small-signal model for a drift region with a spatially varying field and field-dependent transport properties is presented. When applied to a BARITT device, results consistent with published experimental data are obtained. The importance of momentum relaxation effects in Si BARITT drift regions is discussed.

Original language	English (US)
Pages (from-to)	37-48
Number of pages	12
Journal	Solid State Electronics
Volume	24
Issue number	1
DOIs	https://doi.org/10.1016/0038-1101(81)90210-0
State	Published - Jan 1981
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/0038-1101(81)90210-0

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abstract = "An iterative procedure for obtaining two-carrier d.c. solutions in regions of rapidly varying carrier concentration is presented. The procedure uses an analytic solution for the carrier concentrations in a region of linear spatial electric field variation. Field-dependent diffusion and field-dependent velocities are assumed. A single-carrier small-signal model for a drift region with a spatially varying field and field-dependent transport properties is presented. When applied to a BARITT device, results consistent with published experimental data are obtained. The importance of momentum relaxation effects in Si BARITT drift regions is discussed.",

author = "McCleer, {P. J.} and Snyder, {D. E.} and Grondin, {R. O.} and Haddad, {G. I.}",

year = "1981",

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PY - 1981/1

Y1 - 1981/1

N2 - An iterative procedure for obtaining two-carrier d.c. solutions in regions of rapidly varying carrier concentration is presented. The procedure uses an analytic solution for the carrier concentrations in a region of linear spatial electric field variation. Field-dependent diffusion and field-dependent velocities are assumed. A single-carrier small-signal model for a drift region with a spatially varying field and field-dependent transport properties is presented. When applied to a BARITT device, results consistent with published experimental data are obtained. The importance of momentum relaxation effects in Si BARITT drift regions is discussed.

AB - An iterative procedure for obtaining two-carrier d.c. solutions in regions of rapidly varying carrier concentration is presented. The procedure uses an analytic solution for the carrier concentrations in a region of linear spatial electric field variation. Field-dependent diffusion and field-dependent velocities are assumed. A single-carrier small-signal model for a drift region with a spatially varying field and field-dependent transport properties is presented. When applied to a BARITT device, results consistent with published experimental data are obtained. The importance of momentum relaxation effects in Si BARITT drift regions is discussed.

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Analytic modeling of transit-time device drift regions with field-dependent transport coefficients

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