Analytic modeling of transit-time device drift regions with field-dependent transport coefficients

P. J. McCleer, D. E. Snyder, R. O. Grondin, G. I. Haddad

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

An iterative procedure for obtaining two-carrier d.c. solutions in regions of rapidly varying carrier concentration is presented. The procedure uses an analytic solution for the carrier concentrations in a region of linear spatial electric field variation. Field-dependent diffusion and field-dependent velocities are assumed. A single-carrier small-signal model for a drift region with a spatially varying field and field-dependent transport properties is presented. When applied to a BARITT device, results consistent with published experimental data are obtained. The importance of momentum relaxation effects in Si BARITT drift regions is discussed.

Original languageEnglish (US)
Pages (from-to)37-48
Number of pages12
JournalSolid State Electronics
Volume24
Issue number1
DOIs
StatePublished - Jan 1981
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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