Analytic modeling of transit-time device drift regions with field-dependent transport coefficients

P. J. McCleer, D. E. Snyder, R. O. Grondin, G. I. Haddad

    Research output: Contribution to journalArticlepeer-review

    2 Scopus citations

    Abstract

    An iterative procedure for obtaining two-carrier d.c. solutions in regions of rapidly varying carrier concentration is presented. The procedure uses an analytic solution for the carrier concentrations in a region of linear spatial electric field variation. Field-dependent diffusion and field-dependent velocities are assumed. A single-carrier small-signal model for a drift region with a spatially varying field and field-dependent transport properties is presented. When applied to a BARITT device, results consistent with published experimental data are obtained. The importance of momentum relaxation effects in Si BARITT drift regions is discussed.

    Original languageEnglish (US)
    Pages (from-to)37-48
    Number of pages12
    JournalSolid State Electronics
    Volume24
    Issue number1
    DOIs
    StatePublished - Jan 1981

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Analytic modeling of transit-time device drift regions with field-dependent transport coefficients'. Together they form a unique fingerprint.

    Cite this