Analytic model foramorphous GST OTS in phase change memory cell with hopping transport

Wei Wang, Cheng Wang, Yu Cao, Hao Wang, Yun Ye, Jin He

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents an analytic model for amorphous GST OTS in phase-change-memory cell with the hopping transport mechanism, which is widely used in the organic semiconductor device simulation. In this work an equivalent hopping probability model is presented according to the Abrahams-Miller formula, and then an equivalent capacitor model is develped to depict the charge distribution in the amorphous GST. By coupling the hopping probability model and the capacitor model, the OTS I-V characteristic for OTS effect with different geometry and trap density are achieved, and the results agree with those from the reported measurements data.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages508-511
Number of pages4
StatePublished - Aug 9 2013
EventNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
Duration: May 12 2013May 16 2013

Publication series

NameTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume2

Other

OtherNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
CountryUnited States
CityWashington, DC
Period5/12/135/16/13

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Keywords

  • Chalcogenide glasses
  • Charge transport
  • Monte Carlo

ASJC Scopus subject areas

  • Biotechnology

Cite this

Wang, W., Wang, C., Cao, Y., Wang, H., Ye, Y., & He, J. (2013). Analytic model foramorphous GST OTS in phase change memory cell with hopping transport. In Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 (pp. 508-511). (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; Vol. 2).