Analytic model for minority carrier effects in nanoscale Schottky contacts

Lifeng Hao, Peter Bennett

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present an analytic model for the current-voltage (I-V) behavior for a nanoscale Schottky contact, emphasizing the role of minority carriers. The minority carriers give rise to a surface recombination current that can strongly dominate the majority current flow throughout the bias range. The I-V curve for the surface recombination current shows a weak rectifying behavior, which could be misinterpreted as large variations of ideality factor and effective barrier height. The model calculations show a good match with experimental I-V curves for nanoscale CoSi2 epitaxial islands on Si(111) and for direct scanning tunnel microscope tip point contacts, for a range of island size, doping type, and surface Fermi level.

Original languageEnglish (US)
Article number014303
JournalJournal of Applied Physics
Volume108
Issue number1
DOIs
StatePublished - Jul 1 2010

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minority carriers
electric contacts
curves
Fermi surfaces
tunnels
microscopes
scanning
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Analytic model for minority carrier effects in nanoscale Schottky contacts. / Hao, Lifeng; Bennett, Peter.

In: Journal of Applied Physics, Vol. 108, No. 1, 014303, 01.07.2010.

Research output: Contribution to journalArticle

@article{1d29b164aa3b4c8ea33172244d4e8f32,
title = "Analytic model for minority carrier effects in nanoscale Schottky contacts",
abstract = "We present an analytic model for the current-voltage (I-V) behavior for a nanoscale Schottky contact, emphasizing the role of minority carriers. The minority carriers give rise to a surface recombination current that can strongly dominate the majority current flow throughout the bias range. The I-V curve for the surface recombination current shows a weak rectifying behavior, which could be misinterpreted as large variations of ideality factor and effective barrier height. The model calculations show a good match with experimental I-V curves for nanoscale CoSi2 epitaxial islands on Si(111) and for direct scanning tunnel microscope tip point contacts, for a range of island size, doping type, and surface Fermi level.",
author = "Lifeng Hao and Peter Bennett",
year = "2010",
month = "7",
day = "1",
doi = "10.1063/1.3448231",
language = "English (US)",
volume = "108",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Analytic model for minority carrier effects in nanoscale Schottky contacts

AU - Hao, Lifeng

AU - Bennett, Peter

PY - 2010/7/1

Y1 - 2010/7/1

N2 - We present an analytic model for the current-voltage (I-V) behavior for a nanoscale Schottky contact, emphasizing the role of minority carriers. The minority carriers give rise to a surface recombination current that can strongly dominate the majority current flow throughout the bias range. The I-V curve for the surface recombination current shows a weak rectifying behavior, which could be misinterpreted as large variations of ideality factor and effective barrier height. The model calculations show a good match with experimental I-V curves for nanoscale CoSi2 epitaxial islands on Si(111) and for direct scanning tunnel microscope tip point contacts, for a range of island size, doping type, and surface Fermi level.

AB - We present an analytic model for the current-voltage (I-V) behavior for a nanoscale Schottky contact, emphasizing the role of minority carriers. The minority carriers give rise to a surface recombination current that can strongly dominate the majority current flow throughout the bias range. The I-V curve for the surface recombination current shows a weak rectifying behavior, which could be misinterpreted as large variations of ideality factor and effective barrier height. The model calculations show a good match with experimental I-V curves for nanoscale CoSi2 epitaxial islands on Si(111) and for direct scanning tunnel microscope tip point contacts, for a range of island size, doping type, and surface Fermi level.

UR - http://www.scopus.com/inward/record.url?scp=77955225579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955225579&partnerID=8YFLogxK

U2 - 10.1063/1.3448231

DO - 10.1063/1.3448231

M3 - Article

VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

M1 - 014303

ER -