TY - JOUR
T1 - Analysis of Transient Behavior of Vertical Interconnects in Stacked Circuit Board Layers Using Quasi-Static Techniques
AU - Pan, George
AU - Zhu, Xiaojun
AU - Gilbert, Barry K.
N1 - Funding Information:
Manuscript received February 1, 1994; revised November 8, 1994. This work was supported in part by ARPAESTO under Grant NOOO14-91-J-4030 from the Office of Naval Research and Boeing Aerospace Co. under Contract 133-P771. G.-W. Pan is with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA. X. Zhu is with Ansoft Corporation, Pittsburgh, PA 15219 USA. B. Gilbert is with the Department of Physiology and Biophysics, Mayo Foundation, Rochester, MN 55905 USA. IEEE Log Number 9410921.
PY - 1995/8
Y1 - 1995/8
N2 - Fuzz-buttons can interconnect up to fifty circuit board substrate layers in conjunction with metallic vias. As a result, the use of three-dimensional multichip modules (MCM‘s) with fuzz-buttons may be able to achieve very high packaging densities. On the other hand, the vertical interconnects, surrounded by different dielectric materials and passing through many ground mesh holes, are three-dimensional nonuniform transmission lines. Therefore, the electromagnetic analysis of fuzz-button interconnects is not straightforward. In this paper, we propose a method to analyze fuzz-buttons under quasistatic assumptions. We apply the electrostatic method to find the charge distribution and the distributed capacitance of the fuzz-buttons, and a quasimagnetostatic approach to calculate the inductance. By using image theory, a free space Green's function is formulated. The effect of the via holes is taken into account by utilizing the equivalence principle. A set of integral equations is established and solved by a combination of the point-matching method and Galerkin's method. An iterative algorithm is imposed to solve the matrix equations. After the equivalent nonuniform transmission line model is established, we then apply the transmission (ABCD) matrix method, allowing the propagation parameters to be obtained easily. Finally, we employ the fast fourier transform (FFT) to convert the frequency results into the time domain. Waveform distortion, time delay, and crosstalk values for a 60 ps risetime input signal are evaluated. The quasistatic approach is compared against the finite difference time domain (FDTD) algorithms and good agreement is observed.
AB - Fuzz-buttons can interconnect up to fifty circuit board substrate layers in conjunction with metallic vias. As a result, the use of three-dimensional multichip modules (MCM‘s) with fuzz-buttons may be able to achieve very high packaging densities. On the other hand, the vertical interconnects, surrounded by different dielectric materials and passing through many ground mesh holes, are three-dimensional nonuniform transmission lines. Therefore, the electromagnetic analysis of fuzz-button interconnects is not straightforward. In this paper, we propose a method to analyze fuzz-buttons under quasistatic assumptions. We apply the electrostatic method to find the charge distribution and the distributed capacitance of the fuzz-buttons, and a quasimagnetostatic approach to calculate the inductance. By using image theory, a free space Green's function is formulated. The effect of the via holes is taken into account by utilizing the equivalence principle. A set of integral equations is established and solved by a combination of the point-matching method and Galerkin's method. An iterative algorithm is imposed to solve the matrix equations. After the equivalent nonuniform transmission line model is established, we then apply the transmission (ABCD) matrix method, allowing the propagation parameters to be obtained easily. Finally, we employ the fast fourier transform (FFT) to convert the frequency results into the time domain. Waveform distortion, time delay, and crosstalk values for a 60 ps risetime input signal are evaluated. The quasistatic approach is compared against the finite difference time domain (FDTD) algorithms and good agreement is observed.
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U2 - 10.1109/96.404111
DO - 10.1109/96.404111
M3 - Article
AN - SCOPUS:0029357326
SN - 1070-9894
VL - 18
SP - 521
EP - 531
JO - IEEE Transactions on Components Packaging and Manufacturing Technology Part B
JF - IEEE Transactions on Components Packaging and Manufacturing Technology Part B
IS - 3
ER -