### Abstract

The line shapes of single-particle scattering spectra for spin-density fluctuations of electrons in n-GaAs with carrier concentrations ranging from 5×10^{15} to 7×10^{17} cm^{-3} have been analyzed. We have found that the Raman line shapes can be very well explained by a theory developed by Hamilton and McWhorter which takes into account both the band-structure effects in semiconductors and the effects of carrier collision in a relaxation time approximation. For carrier concentration n≥2×10 ^{16} cm^{-3}, the effects of finite collision time has been demonstrated to be very important and these effects must be properly taken into account in order to satisfactorily interpret the line shapes of single-particle scattering spectra for spin-density fluctuations in n-GaAs at T=300 K. We show that although Lindhard-Mermin's expression for dielectric constant as well as Hamilton and McWhorter's theory fit the Raman line shapes equally well for carrier density n=7×10^{17} cm^{-3}, neglect of band-structure effects of the former tends to underestimate the carrier collision time. An interpretation of the deduced collision time in terms of electron-electron, electron-impurity, and electron-phonon scattering is also given.

Original language | English (US) |
---|---|

Pages (from-to) | 3023-3027 |

Number of pages | 5 |

Journal | Journal of Applied Physics |

Volume | 73 |

Issue number | 6 |

DOIs | |

State | Published - 1993 |

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### ASJC Scopus subject areas

- Physics and Astronomy (miscellaneous)

### Cite this

*Journal of Applied Physics*,

*73*(6), 3023-3027. https://doi.org/10.1063/1.353008

**Analysis of the single-particle scattering spectra for spin-density fluctuations of electrons in n-GaAs at T=300 K.** / Tsen, Kong-Thon; Chia, C.; Sankey, O. F.

Research output: Contribution to journal › Article

*Journal of Applied Physics*, vol. 73, no. 6, pp. 3023-3027. https://doi.org/10.1063/1.353008

}

TY - JOUR

T1 - Analysis of the single-particle scattering spectra for spin-density fluctuations of electrons in n-GaAs at T=300 K

AU - Tsen, Kong-Thon

AU - Chia, C.

AU - Sankey, O. F.

PY - 1993

Y1 - 1993

N2 - The line shapes of single-particle scattering spectra for spin-density fluctuations of electrons in n-GaAs with carrier concentrations ranging from 5×1015 to 7×1017 cm-3 have been analyzed. We have found that the Raman line shapes can be very well explained by a theory developed by Hamilton and McWhorter which takes into account both the band-structure effects in semiconductors and the effects of carrier collision in a relaxation time approximation. For carrier concentration n≥2×10 16 cm-3, the effects of finite collision time has been demonstrated to be very important and these effects must be properly taken into account in order to satisfactorily interpret the line shapes of single-particle scattering spectra for spin-density fluctuations in n-GaAs at T=300 K. We show that although Lindhard-Mermin's expression for dielectric constant as well as Hamilton and McWhorter's theory fit the Raman line shapes equally well for carrier density n=7×1017 cm-3, neglect of band-structure effects of the former tends to underestimate the carrier collision time. An interpretation of the deduced collision time in terms of electron-electron, electron-impurity, and electron-phonon scattering is also given.

AB - The line shapes of single-particle scattering spectra for spin-density fluctuations of electrons in n-GaAs with carrier concentrations ranging from 5×1015 to 7×1017 cm-3 have been analyzed. We have found that the Raman line shapes can be very well explained by a theory developed by Hamilton and McWhorter which takes into account both the band-structure effects in semiconductors and the effects of carrier collision in a relaxation time approximation. For carrier concentration n≥2×10 16 cm-3, the effects of finite collision time has been demonstrated to be very important and these effects must be properly taken into account in order to satisfactorily interpret the line shapes of single-particle scattering spectra for spin-density fluctuations in n-GaAs at T=300 K. We show that although Lindhard-Mermin's expression for dielectric constant as well as Hamilton and McWhorter's theory fit the Raman line shapes equally well for carrier density n=7×1017 cm-3, neglect of band-structure effects of the former tends to underestimate the carrier collision time. An interpretation of the deduced collision time in terms of electron-electron, electron-impurity, and electron-phonon scattering is also given.

UR - http://www.scopus.com/inward/record.url?scp=5544297806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5544297806&partnerID=8YFLogxK

U2 - 10.1063/1.353008

DO - 10.1063/1.353008

M3 - Article

AN - SCOPUS:5544297806

VL - 73

SP - 3023

EP - 3027

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -