Abstract

The mathematical dependence of bandgap-voltage offset on Auger and radiative recombination is derived. To study the recombination near the intrinsic limit, we manufacture thin silicon heterojunction test structures designed to minimize surface recombination, and to measure voltages and effective lifetimes near the Auger and radiative limit. Open-circuit voltages over 760 mV were measured on 50-μm-thick structures, leading to bandgap-voltage offsets at open-circuit down to 0.35 V. The Auger and radiative recombination represents over 90% of the recombination at open-circuit. This dominance also holds at the maximum power point, giving pseudo-fill factors of 86%. We demonstrate the potential of thin silicon devices to reach high voltages, and bandgap-voltage offsets in line with the best reported for direct bandgap materials such as gallium indium phosphide and gallium arsenide.

Original languageEnglish (US)
Article number205704
JournalJournal of Applied Physics
Volume121
Issue number20
DOIs
StatePublished - May 28 2017

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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