Abstract

The mathematical dependence of bandgap-voltage offset on Auger and radiative recombination is derived. To study the recombination near the intrinsic limit, we manufacture thin silicon heterojunction test structures designed to minimize surface recombination, and to measure voltages and effective lifetimes near the Auger and radiative limit. Open-circuit voltages over 760 mV were measured on 50-μm-thick structures, leading to bandgap-voltage offsets at open-circuit down to 0.35 V. The Auger and radiative recombination represents over 90% of the recombination at open-circuit. This dominance also holds at the maximum power point, giving pseudo-fill factors of 86%. We demonstrate the potential of thin silicon devices to reach high voltages, and bandgap-voltage offsets in line with the best reported for direct bandgap materials such as gallium indium phosphide and gallium arsenide.

Original languageEnglish (US)
Article number205704
JournalJournal of Applied Physics
Volume121
Issue number20
DOIs
StatePublished - May 28 2017

Fingerprint

solar cells
electric potential
radiative recombination
gallium phosphides
indium phosphides
silicon
open circuit voltage
gallium
heterojunctions
high voltages
life (durability)

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{c5b6cef3227b4fdb9d576aa783451d18,
title = "Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset",
abstract = "The mathematical dependence of bandgap-voltage offset on Auger and radiative recombination is derived. To study the recombination near the intrinsic limit, we manufacture thin silicon heterojunction test structures designed to minimize surface recombination, and to measure voltages and effective lifetimes near the Auger and radiative limit. Open-circuit voltages over 760 mV were measured on 50-μm-thick structures, leading to bandgap-voltage offsets at open-circuit down to 0.35 V. The Auger and radiative recombination represents over 90{\%} of the recombination at open-circuit. This dominance also holds at the maximum power point, giving pseudo-fill factors of 86{\%}. We demonstrate the potential of thin silicon devices to reach high voltages, and bandgap-voltage offsets in line with the best reported for direct bandgap materials such as gallium indium phosphide and gallium arsenide.",
author = "Andr{\'e} Augusto and Stanislau Herasimenka and Richard King and Stuart Bowden and Christiana Honsberg",
year = "2017",
month = "5",
day = "28",
doi = "10.1063/1.4984071",
language = "English (US)",
volume = "121",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset

AU - Augusto, André

AU - Herasimenka, Stanislau

AU - King, Richard

AU - Bowden, Stuart

AU - Honsberg, Christiana

PY - 2017/5/28

Y1 - 2017/5/28

N2 - The mathematical dependence of bandgap-voltage offset on Auger and radiative recombination is derived. To study the recombination near the intrinsic limit, we manufacture thin silicon heterojunction test structures designed to minimize surface recombination, and to measure voltages and effective lifetimes near the Auger and radiative limit. Open-circuit voltages over 760 mV were measured on 50-μm-thick structures, leading to bandgap-voltage offsets at open-circuit down to 0.35 V. The Auger and radiative recombination represents over 90% of the recombination at open-circuit. This dominance also holds at the maximum power point, giving pseudo-fill factors of 86%. We demonstrate the potential of thin silicon devices to reach high voltages, and bandgap-voltage offsets in line with the best reported for direct bandgap materials such as gallium indium phosphide and gallium arsenide.

AB - The mathematical dependence of bandgap-voltage offset on Auger and radiative recombination is derived. To study the recombination near the intrinsic limit, we manufacture thin silicon heterojunction test structures designed to minimize surface recombination, and to measure voltages and effective lifetimes near the Auger and radiative limit. Open-circuit voltages over 760 mV were measured on 50-μm-thick structures, leading to bandgap-voltage offsets at open-circuit down to 0.35 V. The Auger and radiative recombination represents over 90% of the recombination at open-circuit. This dominance also holds at the maximum power point, giving pseudo-fill factors of 86%. We demonstrate the potential of thin silicon devices to reach high voltages, and bandgap-voltage offsets in line with the best reported for direct bandgap materials such as gallium indium phosphide and gallium arsenide.

UR - http://www.scopus.com/inward/record.url?scp=85020008479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85020008479&partnerID=8YFLogxK

U2 - 10.1063/1.4984071

DO - 10.1063/1.4984071

M3 - Article

AN - SCOPUS:85020008479

VL - 121

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 20

M1 - 205704

ER -