@article{03cd6362aaba4407874d1ae77cdba9a2,
title = "Analysis of the dependence of critical electric field on semiconductor bandgap",
abstract = "Understanding of semiconductor breakdown under high electric fields is an important aspect of materials{\textquoteright} properties, particularly for the design of power devices. For decades, a power-law has been used to describe the dependence of material-specific critical electrical field (Ecrit) at which the material breaks down and bandgap (Eg). The relationship is often used to gauge tradeoffs of emerging materials whose properties haven{\textquoteright}t yet been determined. Unfortunately, the reported dependencies of Ecrit on Eg cover a surprisingly wide range in the literature. Moreover, Ecrit is a function of material doping. Further, discrepancies arise in Ecrit values owing to differences between punch-through and non-punch-through device structures. We report a new normalization procedure that enables comparison of critical electric field values across materials, doping, and different device types. An extensive examination of numerous references reveals that the dependence Ecrit ∝ Eg1.83 best fits the most reliable and newest data for both direct and indirect semiconductors. Graphical abstract: [Figure not available: see fulltext.].",
keywords = "Devices, Electrical properties, III–V, Semiconducting, Simulation",
author = "Oleksiy Slobodyan and Jack Flicker and Jeramy Dickerson and Jonah Shoemaker and Andrew Binder and Trevor Smith and Stephen Goodnick and Robert Kaplar and Mark Hollis",
note = "Funding Information: Mark Hollis would like to thank William Loh and Erik Duerr at MIT Lincoln Laboratory for their helpful discussions on this work. Oleksiy Slobodyan, Jack Flicker, Jeramy Dickerson, Andrew Binder, Trevor Smith, and Robert Kaplar would like to thank Albert Baca and Mary Crawford of Sandia National Laboratories for their review and input on this work. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia (NTESS) LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy{\textquoteright}s National Nuclear Security Administration under contract DE-NA0003525. The opinions expressed in this paper are solely those of the authors and do not represent the views or recommendations of NTESS. Approved for public release: distribution unlimited. This material is based upon work supported by the Under Secretary of Defense for Research and Engineering under Air Force Contract No. FA8702-15-D-0001. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the Under Secretary of Defense for Research and Engineering. This work was supported by the DOE Office of Electricity{\textquoteright}s Energy Storage Program managed by Dr. Imre Gyuk during the draft and literature research phases of writing. The Energy Frontier Research Center on Ultrawide Bandgap Materials (EFRC-UWBG) funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) division under award number DE-SC0021230 supported this work during the revision phase. Funding Information: Mark Hollis would like to thank William Loh and Erik Duerr at MIT Lincoln Laboratory for their helpful discussions on this work. Oleksiy Slobodyan, Jack Flicker, Jeramy Dickerson, Andrew Binder, Trevor Smith, and Robert Kaplar would like to thank Albert Baca and Mary Crawford of Sandia National Laboratories for their review and input on this work. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia (NTESS) LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy{\textquoteright}s National Nuclear Security Administration under contract DE-NA0003525. The opinions expressed in this paper are solely those of the authors and do not represent the views or recommendations of NTESS. Approved for public release: distribution unlimited. This material is based upon work supported by the Under Secretary of Defense for Research and Engineering under Air Force Contract No. FA8702-15-D-0001. Any opinions, findings, conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the Under Secretary of Defense for Research and Engineering. This work was supported by the DOE Office of Electricity{\textquoteright}s Energy Storage Program managed by Dr. Imre Gyuk during the draft and literature research phases of writing. The Energy Frontier Research Center on Ultrawide Bandgap Materials (EFRC-UWBG) funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) division under award number DE-SC0021230 supported this work during the revision phase. Publisher Copyright: {\textcopyright} 2022, National Technology & Engineering Solutions of Sandia, LLC.",
year = "2022",
month = feb,
day = "28",
doi = "10.1557/s43578-021-00465-2",
language = "English (US)",
volume = "37",
pages = "849--865",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "4",
}