Analysis of STT-RAM cell design with multiple MTJs per access

Henry Park, Richard Dorrance, Amr Amin, Fengbo Ren, Dejan Marković, C. K. Ken Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Density of STT-RAMs is limited by the area cost and width of the access device in a cell since it needs to support the programming currents. This paper explores a cell structure that shares each cell's access transistor with multiple MTJ memory elements. Feasibility and limitations of such a cell structure is explored for both reading and writing of the memory. The analytical and simulation results indicate that only small amount of sharing is possible and having MTJs that can handle a high read current without disturbing the cell is needed.

Original languageEnglish (US)
Title of host publicationProceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2011
Pages53-58
Number of pages6
DOIs
StatePublished - 2011
Event2011 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2011 - San Diego, CA, United States
Duration: Jun 8 2011Jun 9 2011

Publication series

NameProceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2011

Other

Other2011 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2011
CountryUnited States
CitySan Diego, CA
Period6/8/116/9/11

Keywords

  • 1T-3MTJ
  • Magnetic Tunnel Junction
  • STT-RAM

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Park, H., Dorrance, R., Amin, A., Ren, F., Marković, D., & Ken Yang, C. K. (2011). Analysis of STT-RAM cell design with multiple MTJs per access. In Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2011 (pp. 53-58). [5941483] (Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2011). https://doi.org/10.1109/NANOARCH.2011.5941483