Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

K. Muthuseenu; H. J. Barnaby; K. F. Galloway; A. E. Koziukov; T. A. Maksimenko; M. Y. Vyrostkov; K. B. Bu-Khasan; A. A. Kalashnikova; Aymeric Privat

doi:10.1109/TNS.2021.3053168

Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

K. Muthuseenu, H. J. Barnaby, K. F. Galloway, A. E. Koziukov, T. A. Maksimenko, M. Y. Vyrostkov, K. B. Bu-Khasan, A. A. Kalashnikova, Aymeric Privat

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

This article compares and analyzes the single-event gate rupture (SEGR) response of silicon planar gate super-junction (SJ) power metal oxide semiconductor field effect transistors (MOSFETs) and vertical double diffused power MOSFETs (VDMOSs). When an incident heavy-ion strike is perpendicular to the gate oxide, the SEGR tolerances of SJ power MOSFETs (SJMOSs) and VDMOSs are similar. But, for heavy-ion strikes that are at different angles, SJMOS has better SEGR tolerance than VDMOS. This improved performance of SJMOS is due to the presence of an additional horizontal electric field component in SJMOS devices. This is validated using the experimental data and simulation results in this article.

Original language	English (US)
Article number	9328811
Pages (from-to)	611-616
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	68
Issue number	5
DOIs	https://doi.org/10.1109/TNS.2021.3053168
State	Published - May 2021

Keywords

Heavy ion
VDMOS
power MOSFET
single-event gate rupture (SEGR)
super-junction (SJ)
technology computer-aided design (TCAD) analysis

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2021.3053168

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title = "Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs",

abstract = "This article compares and analyzes the single-event gate rupture (SEGR) response of silicon planar gate super-junction (SJ) power metal oxide semiconductor field effect transistors (MOSFETs) and vertical double diffused power MOSFETs (VDMOSs). When an incident heavy-ion strike is perpendicular to the gate oxide, the SEGR tolerances of SJ power MOSFETs (SJMOSs) and VDMOSs are similar. But, for heavy-ion strikes that are at different angles, SJMOS has better SEGR tolerance than VDMOS. This improved performance of SJMOS is due to the presence of an additional horizontal electric field component in SJMOS devices. This is validated using the experimental data and simulation results in this article. ",

keywords = "Heavy ion, VDMOS, power MOSFET, single-event gate rupture (SEGR), super-junction (SJ), technology computer-aided design (TCAD) analysis",

author = "K. Muthuseenu and Barnaby, {H. J.} and Galloway, {K. F.} and Koziukov, {A. E.} and Maksimenko, {T. A.} and Vyrostkov, {M. Y.} and Bu-Khasan, {K. B.} and Kalashnikova, {A. A.} and Aymeric Privat",

note = "Funding Information: Manuscript received December 8, 2020; revised January 12, 2021; accepted January 16, 2021. Date of publication January 20, 2021; date of current version May 20, 2021. This work was supported in part by the Defense Threat Reduction Agency (DTRA) under Grant HDTRA1-17-1-0038. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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language = "English (US)",

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AU - Barnaby, H. J.

AU - Galloway, K. F.

AU - Koziukov, A. E.

AU - Maksimenko, T. A.

AU - Vyrostkov, M. Y.

AU - Bu-Khasan, K. B.

AU - Kalashnikova, A. A.

AU - Privat, Aymeric

N1 - Funding Information: Manuscript received December 8, 2020; revised January 12, 2021; accepted January 16, 2021. Date of publication January 20, 2021; date of current version May 20, 2021. This work was supported in part by the Defense Threat Reduction Agency (DTRA) under Grant HDTRA1-17-1-0038. Publisher Copyright: © 1963-2012 IEEE.

PY - 2021/5

Y1 - 2021/5

N2 - This article compares and analyzes the single-event gate rupture (SEGR) response of silicon planar gate super-junction (SJ) power metal oxide semiconductor field effect transistors (MOSFETs) and vertical double diffused power MOSFETs (VDMOSs). When an incident heavy-ion strike is perpendicular to the gate oxide, the SEGR tolerances of SJ power MOSFETs (SJMOSs) and VDMOSs are similar. But, for heavy-ion strikes that are at different angles, SJMOS has better SEGR tolerance than VDMOS. This improved performance of SJMOS is due to the presence of an additional horizontal electric field component in SJMOS devices. This is validated using the experimental data and simulation results in this article.

AB - This article compares and analyzes the single-event gate rupture (SEGR) response of silicon planar gate super-junction (SJ) power metal oxide semiconductor field effect transistors (MOSFETs) and vertical double diffused power MOSFETs (VDMOSs). When an incident heavy-ion strike is perpendicular to the gate oxide, the SEGR tolerances of SJ power MOSFETs (SJMOSs) and VDMOSs are similar. But, for heavy-ion strikes that are at different angles, SJMOS has better SEGR tolerance than VDMOS. This improved performance of SJMOS is due to the presence of an additional horizontal electric field component in SJMOS devices. This is validated using the experimental data and simulation results in this article.

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Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

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Keywords

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