Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS₂field-effect-transistors

Engineering & Materials Science

• Fermi level 100%
• Monolayers 75%
• Chemical vapor deposition 67%
• Transistors 49%
• Metals 29%
• Metallizing 26%
• Field effect transistors 24%
• Defects 23%
• Fabrication 17%
• Transport properties 14%
• Molybdenum 13%
• Characterization (materials science) 10%
• Statistical methods 9%
• Throughput 8%
• Temperature 4%
• Experiments 4%

Chemical Compounds

• Schottky Barrier 79%
• Fermi Level 66%
• Monolayer 43%
• Flake Like Crystal 36%
• Metal 20%
• Molybdenum Disulfide 13%
• Work Function 13%
• Transport Property 10%
• Chemical Vapour Deposition 10%
• Reduction 5%

Medicine & Life Sciences

• Metals 50%
• molybdenum disulfide 27%
• Temperature 10%
• Equipment and Supplies 8%