Analysis of residual stress in polycrystalline silver thin films by x-ray diffraction

Terry Alford, Yuxiao Zeng, Y. L. Zou, F. Deng, S. S. Lau, T. Laursen, B. Manfred Ullrich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The stress state of evaporated Ag films prepared on Ti underlayers before and after encapsulation process has been studied by x-ray diffraction using a `sin 2ψ' technique. A low tensile stress of approximately 61 MPa was measured in the as-deposited Ag films. The stress was caused by nonequilibrium growth during film deposition and resulted in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress was produced by the encapsulation process at 600 °C, but most of this stress relaxed during the cooling stage, and a residual tensile stress of approximately 320 MPa in the film plane was determined.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages293-298
Number of pages6
Volume472
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 1 1997Apr 4 1997

Other

OtherProceedings of the 1997 MRS Spring Symposium
CitySan Francisco, CA, USA
Period4/1/974/4/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Alford, T., Zeng, Y., Zou, Y. L., Deng, F., Lau, S. S., Laursen, T., & Ullrich, B. M. (1997). Analysis of residual stress in polycrystalline silver thin films by x-ray diffraction. In Materials Research Society Symposium - Proceedings (Vol. 472, pp. 293-298). MRS.