Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures

D. H. Shin; C. E. Becker; J. J. Harris; J. M. Fernández; N. J. Woods; Trevor Thornton; D. K. Maude; J. C. Portal

doi:10.1088/0268-1242/13/10/009

Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-_1-xGe_x structures

D. H. Shin, C. E. Becker, J. J. Harris, J. M. Fernández, N. J. Woods, Trevor Thornton, D. K. Maude, J. C. Portal

Research output: Contribution to journal › Article › peer-review

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Abstract

Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type Si/Si_1-xGe_x heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above ∼0.3 K. The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above ∼1 K, and this is attributed to increased small-angle scattering due to acoustic phonons.

Original language	English (US)
Pages (from-to)	1106-1110
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	13
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/13/10/009
State	Published - Oct 1 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/13/10/009

Cite this

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title = "Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures",

abstract = "Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type Si/Si1-xGex heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above ∼0.3 K. The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above ∼1 K, and this is attributed to increased small-angle scattering due to acoustic phonons.",

author = "Shin, {D. H.} and Becker, {C. E.} and Harris, {J. J.} and Fern{\'a}ndez, {J. M.} and Woods, {N. J.} and Trevor Thornton and Maude, {D. K.} and Portal, {J. C.}",

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T1 - Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures

AU - Shin, D. H.

AU - Becker, C. E.

AU - Harris, J. J.

AU - Fernández, J. M.

AU - Woods, N. J.

AU - Thornton, Trevor

AU - Maude, D. K.

AU - Portal, J. C.

PY - 1998/10/1

Y1 - 1998/10/1

N2 - Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type Si/Si1-xGex heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above ∼0.3 K. The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above ∼1 K, and this is attributed to increased small-angle scattering due to acoustic phonons.

AB - Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type Si/Si1-xGex heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above ∼0.3 K. The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above ∼1 K, and this is attributed to increased small-angle scattering due to acoustic phonons.

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Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-_1-xGe_x structures

Abstract

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