Abstract

Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type Si/Si1-xGex heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above ∼0.3 K. The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above ∼1 K, and this is attributed to increased small-angle scattering due to acoustic phonons.

Original languageEnglish (US)
Pages (from-to)1106-1110
Number of pages5
JournalSemiconductor Science and Technology
Volume13
Issue number10
DOIs
StatePublished - Oct 1998

Fingerprint

Modulation
Scattering
modulation
life (durability)
Electron gas
Phonons
Heterojunctions
Damping
Acoustics
Impurities
Temperature
scattering
electron gas
phonons
plots
damping
deviation
impurities
temperature
acoustics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Shin, D. H., Becker, C. E., Harris, J. J., Fernández, J. M., Woods, N. J., Thornton, T., ... Portal, J. C. (1998). Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures. Semiconductor Science and Technology, 13(10), 1106-1110. https://doi.org/10.1088/0268-1242/13/10/009

Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures. / Shin, D. H.; Becker, C. E.; Harris, J. J.; Fernández, J. M.; Woods, N. J.; Thornton, Trevor; Maude, D. K.; Portal, J. C.

In: Semiconductor Science and Technology, Vol. 13, No. 10, 10.1998, p. 1106-1110.

Research output: Contribution to journalArticle

Shin, DH, Becker, CE, Harris, JJ, Fernández, JM, Woods, NJ, Thornton, T, Maude, DK & Portal, JC 1998, 'Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures', Semiconductor Science and Technology, vol. 13, no. 10, pp. 1106-1110. https://doi.org/10.1088/0268-1242/13/10/009
Shin, D. H. ; Becker, C. E. ; Harris, J. J. ; Fernández, J. M. ; Woods, N. J. ; Thornton, Trevor ; Maude, D. K. ; Portal, J. C. / Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures. In: Semiconductor Science and Technology. 1998 ; Vol. 13, No. 10. pp. 1106-1110.
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