Abstract

Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type Si/Si1-xGex heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above ∼0.3 K. The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above ∼1 K, and this is attributed to increased small-angle scattering due to acoustic phonons.

Original languageEnglish (US)
Pages (from-to)1106-1110
Number of pages5
JournalSemiconductor Science and Technology
Volume13
Issue number10
DOIs
StatePublished - Oct 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Shin, D. H., Becker, C. E., Harris, J. J., Fernández, J. M., Woods, N. J., Thornton, T., Maude, D. K., & Portal, J. C. (1998). Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures. Semiconductor Science and Technology, 13(10), 1106-1110. https://doi.org/10.1088/0268-1242/13/10/009