Abstract
Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type Si/Si1-xGex heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above ∼0.3 K. The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above ∼1 K, and this is attributed to increased small-angle scattering due to acoustic phonons.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1106-1110 |
| Number of pages | 5 |
| Journal | Semiconductor Science and Technology |
| Volume | 13 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 1998 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures. / Shin, D. H.; Becker, C. E.; Harris, J. J.; Fernández, J. M.; Woods, N. J.; Thornton, Trevor; Maude, D. K.; Portal, J. C.
In: Semiconductor Science and Technology, Vol. 13, No. 10, 10.1998, p. 1106-1110.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Analysis of quantum lifetime behaviour in modulation-doped n-channel Si/Si-1-xGex structures
AU - Shin, D. H.
AU - Becker, C. E.
AU - Harris, J. J.
AU - Fernández, J. M.
AU - Woods, N. J.
AU - Thornton, Trevor
AU - Maude, D. K.
AU - Portal, J. C.
PY - 1998/10
Y1 - 1998/10
N2 - Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type Si/Si1-xGex heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above ∼0.3 K. The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above ∼1 K, and this is attributed to increased small-angle scattering due to acoustic phonons.
AB - Shubnikov-de Haas measurements between 0.06 and 1.6 K have been performed on two modulation-doped n-type Si/Si1-xGex heterostructures, and analysed to extract the quantum lifetime. Use of the conventional Dingle formula resulted in deviations from the expected theoretical behaviour above ∼0.3 K. The corresponding quantum lifetime appeared to increase with temperature in the same range. The data were then re-analysed using a modified expression, in which the thermal damping term was neglected. This gave plots with the correct characteristics, and a quantum lifetime which was approximately constant with temperature, as expected for ionized impurity scattering in a degenerate electron gas. A decrease in the quantum lifetime was observed above ∼1 K, and this is attributed to increased small-angle scattering due to acoustic phonons.
UR - http://www.scopus.com/inward/record.url?scp=0032182056&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032182056&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/13/10/009
DO - 10.1088/0268-1242/13/10/009
M3 - Article
AN - SCOPUS:0032182056
VL - 13
SP - 1106
EP - 1110
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 10
ER -