Abstract
We combine the extended finite element method with simulations of diffracted x-ray intensities to investigate the diffusely scattered intensity due to dislocations. As a model system a thin PbSe epitaxial layer grown on top of a PbTe buffer on a CdTe substrate was chosen. The PbSe film shows a periodic dislocation network where the dislocations run along the orthogonal 〈 110 〉 directions. The array of dislocations within this layer can be described by a short range order model with a narrow distribution.
Original language | English (US) |
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Article number | 131905 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 13 |
DOIs | |
State | Published - 2010 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)