Analysis of near edge fine structure and electronic populations in sapphire

Xi Jun Fan, Shu Fen Tian, Tian Ping Li, J. S. Bow, Ray Carpenter, S. H. Lin

Research output: Contribution to journalArticle

Abstract

AlL and OK near edge fine structures in sapphire are studied using electron energy loss microspectroscopy in a transmission electron microscope; an analysis of the electronic populations of atoms Al and O, and a comparison between different partial cross sections are given. We consider the ionization of an atom in a homogeneous solid to interpret the elemental effects in the ionization region near edges. The chemical effects in the region near edge onset are interpreted by using extended Hückel molecular orbital theory and Bloch's theorem including the effects of translation symmetry in crystals to calculate the electronic transitions from core-shell to unoccupied valence-shell. We also consider the additional chemical effects, which arise from the elastic backscattering of the atomic ionization waves by the atoms neighboring the exited atom, giving rise to the so-called extended fine structure in the ionization region. The agreement between the calculated results and the experimental energy loss spectra of sapphire from single-phase region is good.

Original languageEnglish (US)
Pages (from-to)1693-1694
Number of pages2
JournalWuli Xuebao/Acta Physica Sinica
Volume47
Issue number10
StatePublished - Oct 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Fan, X. J., Tian, S. F., Li, T. P., Bow, J. S., Carpenter, R., & Lin, S. H. (1998). Analysis of near edge fine structure and electronic populations in sapphire. Wuli Xuebao/Acta Physica Sinica, 47(10), 1693-1694.