Analysis of nano-scale stress in strained silicon materials and microelectronics devices by energy-filtered convergent beam electron diffraction

Peng Zhang, Andrei A. Istratov, Haifeng He, Joel W. Ager, Chris Nelson, Eric Stach, John Mardinly, Christian Kisielowski, Eicke R. Weber, John Spence

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The convergent beam electron diffraction (CBED) technique of transmission electron microscopy (TEM) has excellent capabilities for strain detection at high spatial resolution. Here we report strain measurements in bulk ε-Si/SiGe/Si and in a strained 35nm PMOS device in which SiGe acts as the source and drain. CBED measurements of the composition of the relaxed SiGe buffer are in quantitative agreement with Raman spectroscopy. For the PMOS device, CBED measured a uniaxial compressive stress of 1.12GPa in the channel. However, it was found that even in the cross-sectional TEM samples with thicknesses greater than 300nm, the intrinsic surface strain relaxation was often so severe that no recognizable high-order Laue zone lines in the CBED patterns could be collected. The amorphorization of both free surfaces of the TEM sample to a range of about 80nm is proposed to minimize the impact of surface strain relaxation for future studies. Copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages559-568
Number of pages10
Volume2
Edition2
StatePublished - 2006
Externally publishedYes
Event10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: May 7 2006May 12 2006

Other

Other10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period5/7/065/12/06

Fingerprint

Microelectronics
Electron diffraction
Strain relaxation
Transmission electron microscopy
Strain measurement
Compressive stress
Diffraction patterns
Raman spectroscopy
Strained silicon
Chemical analysis

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Zhang, P., Istratov, A. A., He, H., Ager, J. W., Nelson, C., Stach, E., ... Spence, J. (2006). Analysis of nano-scale stress in strained silicon materials and microelectronics devices by energy-filtered convergent beam electron diffraction. In ECS Transactions (2 ed., Vol. 2, pp. 559-568)

Analysis of nano-scale stress in strained silicon materials and microelectronics devices by energy-filtered convergent beam electron diffraction. / Zhang, Peng; Istratov, Andrei A.; He, Haifeng; Ager, Joel W.; Nelson, Chris; Stach, Eric; Mardinly, John; Kisielowski, Christian; Weber, Eicke R.; Spence, John.

ECS Transactions. Vol. 2 2. ed. 2006. p. 559-568.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, P, Istratov, AA, He, H, Ager, JW, Nelson, C, Stach, E, Mardinly, J, Kisielowski, C, Weber, ER & Spence, J 2006, Analysis of nano-scale stress in strained silicon materials and microelectronics devices by energy-filtered convergent beam electron diffraction. in ECS Transactions. 2 edn, vol. 2, pp. 559-568, 10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society, Denver, CO, United States, 5/7/06.
Zhang P, Istratov AA, He H, Ager JW, Nelson C, Stach E et al. Analysis of nano-scale stress in strained silicon materials and microelectronics devices by energy-filtered convergent beam electron diffraction. In ECS Transactions. 2 ed. Vol. 2. 2006. p. 559-568
Zhang, Peng ; Istratov, Andrei A. ; He, Haifeng ; Ager, Joel W. ; Nelson, Chris ; Stach, Eric ; Mardinly, John ; Kisielowski, Christian ; Weber, Eicke R. ; Spence, John. / Analysis of nano-scale stress in strained silicon materials and microelectronics devices by energy-filtered convergent beam electron diffraction. ECS Transactions. Vol. 2 2. ed. 2006. pp. 559-568
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