Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model

Xuanqi Huang, Houqiang Fu, Hong Chen, Zhijian Lv, Ding Ding, Yuji Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

IlI-nitrides material systems have attracting growing interests in photovoltaic (PV) applications after huge success in optoelectronics. In this work, a semi-analytical model is used to analyze the PV performance of single junction InGaN solar cells. Through clarifying four basic types of loss mechanisms, including transmission loss, thermalization loss, spatial relaxation loss and recombination loss, we discover that transmission loss accounts for the primary part of efficiency loss due to the large bandgaps of III-nitride materials. As for all recombination-related losses, Shockley-Reed-Hall (SRH) recombination loss is dominant over others. By incorporating non-step-like absorptance and emittance with below-bandgap absorption, we discover that reducing SRH recombination current by improving the material quality of InGaN layers proves an efficient approach to optimize the cell performance. Furthermore, the energy conversion efficiency increases with higher material quality and larger solar concentration. Our calculations show that energy conversion efficiency of 7.35% can be achieved under one sun and maximum efficiency of 8.43% under 1000 suns. This theoretical study offers detailed guidance for the future design of high-performance thin film InGaN solar cells.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Keywords

  • InGaN
  • Loss mechanisms
  • Solar cell

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model'. Together they form a unique fingerprint.

  • Cite this

    Huang, X., Fu, H., Chen, H., Lv, Z., Ding, D., & Zhao, Y. (2018). Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366653