Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model

Xuanqi Huang, Houqiang Fu, Hong Chen, Zhijian Lv, Ding Ding, Yuji Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

IlI-nitrides material systems have attracting growing interests in photovoltaic (PV) applications after huge success in optoelectronics. In this work, a semi-analytical model is used to analyze the PV performance of single junction InGaN solar cells. Through clarifying four basic types of loss mechanisms, including transmission loss, thermalization loss, spatial relaxation loss and recombination loss, we discover that transmission loss accounts for the primary part of efficiency loss due to the large bandgaps of III-nitride materials. As for all recombination-related losses, Shockley-Reed-Hall (SRH) recombination loss is dominant over others. By incorporating non-step-like absorptance and emittance with below-bandgap absorption, we discover that reducing SRH recombination current by improving the material quality of InGaN layers proves an efficient approach to optimize the cell performance. Furthermore, the energy conversion efficiency increases with higher material quality and larger solar concentration. Our calculations show that energy conversion efficiency of 7.35% can be achieved under one sun and maximum efficiency of 8.43% under 1000 suns. This theoretical study offers detailed guidance for the future design of high-performance thin film InGaN solar cells.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Fingerprint

Analytical models
Solar cells
Energy conversion
Nitrides
Conversion efficiency
Energy gap
Sun
Optoelectronic devices

Keywords

  • InGaN
  • Loss mechanisms
  • Solar cell

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Huang, X., Fu, H., Chen, H., Lv, Z., Ding, D., & Zhao, Y. (2018). Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366653

Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model. / Huang, Xuanqi; Fu, Houqiang; Chen, Hong; Lv, Zhijian; Ding, Ding; Zhao, Yuji.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Huang, X, Fu, H, Chen, H, Lv, Z, Ding, D & Zhao, Y 2018, Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366653
Huang X, Fu H, Chen H, Lv Z, Ding D, Zhao Y. Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.1109/PVSC.2017.8366653
Huang, Xuanqi ; Fu, Houqiang ; Chen, Hong ; Lv, Zhijian ; Ding, Ding ; Zhao, Yuji. / Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
@inproceedings{b78b0cf301e34f22addedecb533ee046,
title = "Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model",
abstract = "IlI-nitrides material systems have attracting growing interests in photovoltaic (PV) applications after huge success in optoelectronics. In this work, a semi-analytical model is used to analyze the PV performance of single junction InGaN solar cells. Through clarifying four basic types of loss mechanisms, including transmission loss, thermalization loss, spatial relaxation loss and recombination loss, we discover that transmission loss accounts for the primary part of efficiency loss due to the large bandgaps of III-nitride materials. As for all recombination-related losses, Shockley-Reed-Hall (SRH) recombination loss is dominant over others. By incorporating non-step-like absorptance and emittance with below-bandgap absorption, we discover that reducing SRH recombination current by improving the material quality of InGaN layers proves an efficient approach to optimize the cell performance. Furthermore, the energy conversion efficiency increases with higher material quality and larger solar concentration. Our calculations show that energy conversion efficiency of 7.35{\%} can be achieved under one sun and maximum efficiency of 8.43{\%} under 1000 suns. This theoretical study offers detailed guidance for the future design of high-performance thin film InGaN solar cells.",
keywords = "InGaN, Loss mechanisms, Solar cell",
author = "Xuanqi Huang and Houqiang Fu and Hong Chen and Zhijian Lv and Ding Ding and Yuji Zhao",
year = "2018",
month = "5",
day = "25",
doi = "10.1109/PVSC.2017.8366653",
language = "English (US)",
pages = "1--4",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model

AU - Huang, Xuanqi

AU - Fu, Houqiang

AU - Chen, Hong

AU - Lv, Zhijian

AU - Ding, Ding

AU - Zhao, Yuji

PY - 2018/5/25

Y1 - 2018/5/25

N2 - IlI-nitrides material systems have attracting growing interests in photovoltaic (PV) applications after huge success in optoelectronics. In this work, a semi-analytical model is used to analyze the PV performance of single junction InGaN solar cells. Through clarifying four basic types of loss mechanisms, including transmission loss, thermalization loss, spatial relaxation loss and recombination loss, we discover that transmission loss accounts for the primary part of efficiency loss due to the large bandgaps of III-nitride materials. As for all recombination-related losses, Shockley-Reed-Hall (SRH) recombination loss is dominant over others. By incorporating non-step-like absorptance and emittance with below-bandgap absorption, we discover that reducing SRH recombination current by improving the material quality of InGaN layers proves an efficient approach to optimize the cell performance. Furthermore, the energy conversion efficiency increases with higher material quality and larger solar concentration. Our calculations show that energy conversion efficiency of 7.35% can be achieved under one sun and maximum efficiency of 8.43% under 1000 suns. This theoretical study offers detailed guidance for the future design of high-performance thin film InGaN solar cells.

AB - IlI-nitrides material systems have attracting growing interests in photovoltaic (PV) applications after huge success in optoelectronics. In this work, a semi-analytical model is used to analyze the PV performance of single junction InGaN solar cells. Through clarifying four basic types of loss mechanisms, including transmission loss, thermalization loss, spatial relaxation loss and recombination loss, we discover that transmission loss accounts for the primary part of efficiency loss due to the large bandgaps of III-nitride materials. As for all recombination-related losses, Shockley-Reed-Hall (SRH) recombination loss is dominant over others. By incorporating non-step-like absorptance and emittance with below-bandgap absorption, we discover that reducing SRH recombination current by improving the material quality of InGaN layers proves an efficient approach to optimize the cell performance. Furthermore, the energy conversion efficiency increases with higher material quality and larger solar concentration. Our calculations show that energy conversion efficiency of 7.35% can be achieved under one sun and maximum efficiency of 8.43% under 1000 suns. This theoretical study offers detailed guidance for the future design of high-performance thin film InGaN solar cells.

KW - InGaN

KW - Loss mechanisms

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=85048457805&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048457805&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2017.8366653

DO - 10.1109/PVSC.2017.8366653

M3 - Conference contribution

SP - 1

EP - 4

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -