Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model

Xuanqi Huang, Houqiang Fu, Hong Chen, Zhijian Lv, Ding Ding, Yuji Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

III-nitrides material systems have attracting growing interests in photovoltaic (PV) applications after huge success in optoelectronics. In this work, a semi-analytical model is used to analyze the PV performance of single junction InGaN solar cells. Through clarifying four basic types of loss mechanisms, including transmission loss, thermalization loss, spatial relaxation loss and recombination loss, we discover that transmission loss accounts for the primary part of efficiency loss due to the large bandgaps of III-nitride materials. As for all recombination-related losses, Shockley-Reed-Hall (SRH) recombination loss is dominant over others. By incorporating non-step-like absorptance and emittance with below-bandgap absorption, we discover that reducing SRH recombination current by improving the material quality of InGaN layers proves an efficient approach to optimize the cell performance. Furthermore, the energy conversion efficiency increases with higher material quality and larger solar concentration. Our calculations show that energy conversion efficiency of 7.35% can be achieved under one sun and maximum efficiency of 8.43% under 1000 suns. This theoretical study offers detailed guidance for the future design of high-performance thin film InGaN solar cells.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2794-2797
Number of pages4
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Keywords

  • InGaN
  • loss mechanisms
  • solar cell

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Huang, X., Fu, H., Chen, H., Lv, Z., Ding, D., & Zhao, Y. (2016). Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 2794-2797). [7750161] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750161