Analysis of Inverse Lifetime Curves of TaOx Electron-Selective Contacts for Si Solar Cells

Madhan K. Arulanandam; Niranjana Mohan Kumar; Chaomin Zhang; Abhishek Iyer; Robert L. Opila; Richard R. King

doi:10.1109/PVSC40753.2019.8981188

Analysis of Inverse Lifetime Curves of TaO_x Electron-Selective Contacts for Si Solar Cells

Madhan K. Arulanandam, Niranjana Mohan Kumar, Chaomin Zhang, Abhishek Iyer, Robert L. Opila, Richard R. King

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The analysis of Auger-corrected inverse minoritycarrier lifetime as a function of excess carrier concentration can impart information about many crucial solar cell material properties including: emitter saturation current density (J_o), surface recombination velocity (SRV), Shockley-Read-Hall (SRH) recombination in the bulk, trap density, band bending, surface Fermi-level pinning, and bandgap narrowing. This work demonstrates TaO_x as a potential electron selective contact and passivation layer on silicon. Increasing TaO_x thickness reduces the measured upper limit of effective surface recombination velocity (S_{eff, UL})_. The minimum S_{eff, UL} is 55 cm/s for CZ n-Si/ 30 nm TaO_x interfaces. S_{eff, UL} increases for Si / TaO_x / ITO structures due to unfavorable band bending.

Original language	English (US)
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	983-988
Number of pages	6
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8981188
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: Jun 16 2019 → Jun 21 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	6/16/19 → 6/21/19

Keywords

TaO
electron selective contact
minority charge carrier lifetime
rapid thermal annealing
silicon
surface recombination velocity

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC40753.2019.8981188

Cite this

Arulanandam, M. K., Mohan Kumar, N., Zhang, C., Iyer, A., Opila, R. L., & King, R. R. (2019). Analysis of Inverse Lifetime Curves of TaO_x Electron-Selective Contacts for Si Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 983-988). Article 8981188 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8981188

Analysis of Inverse Lifetime Curves of TaO_x Electron-Selective Contacts for Si Solar Cells. / Arulanandam, Madhan K.; Mohan Kumar, Niranjana; Zhang, Chaomin et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 983-988 8981188 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Arulanandam, MK, Mohan Kumar, N, Zhang, C, Iyer, A, Opila, RL & King, RR 2019, Analysis of Inverse Lifetime Curves of TaO_x Electron-Selective Contacts for Si Solar Cells. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8981188, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 983-988, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 6/16/19. https://doi.org/10.1109/PVSC40753.2019.8981188

Arulanandam MK, Mohan Kumar N, Zhang C, Iyer A, Opila RL, King RR. Analysis of Inverse Lifetime Curves of TaO_x Electron-Selective Contacts for Si Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 983-988. 8981188. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8981188

Arulanandam, Madhan K. ; Mohan Kumar, Niranjana ; Zhang, Chaomin et al. / Analysis of Inverse Lifetime Curves of TaO_x Electron-Selective Contacts for Si Solar Cells. 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 983-988 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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