Analysis of Inverse Lifetime Curves of TaOx Electron-Selective Contacts for Si Solar Cells

Madhan K. Arulanandam, Niranjana Mohan Kumar, Chaomin Zhang, Abhishek Iyer, Robert L. Opila, Richard R. King

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The analysis of Auger-corrected inverse minoritycarrier lifetime as a function of excess carrier concentration can impart information about many crucial solar cell material properties including: emitter saturation current density (Jo), surface recombination velocity (SRV), Shockley-Read-Hall (SRH) recombination in the bulk, trap density, band bending, surface Fermi-level pinning, and bandgap narrowing. This work demonstrates TaOx as a potential electron selective contact and passivation layer on silicon. Increasing TaOx thickness reduces the measured upper limit of effective surface recombination velocity (Seff, UL). The minimum Seff, UL is 55 cm/s for CZ n-Si/ 30 nm TaOx interfaces. Seff, UL increases for Si / TaOx / ITO structures due to unfavorable band bending.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages983-988
Number of pages6
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
CountryUnited States
CityChicago
Period6/16/196/21/19

Keywords

  • electron selective contact
  • minority charge carrier lifetime
  • rapid thermal annealing
  • silicon
  • surface recombination velocity
  • TaO

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Analysis of Inverse Lifetime Curves of TaO<sub>x</sub> Electron-Selective Contacts for Si Solar Cells'. Together they form a unique fingerprint.

  • Cite this

    Arulanandam, M. K., Mohan Kumar, N., Zhang, C., Iyer, A., Opila, R. L., & King, R. R. (2019). Analysis of Inverse Lifetime Curves of TaOx Electron-Selective Contacts for Si Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 983-988). [8981188] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8981188