Analysis of high temperature (≥1150°C) furnace annealing of buried oxide wafers formed by ion implantation

S. R. Wilson, M. E. Burnham, M. Kottke, R. P. Lorigan, Stephen Krause, C. O. Jung, J. A. Leavitt, L. C. McIntyre, J. Seerveld, P. Stoss

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Abstract

Silicon-on-insulator films were formed by ion implantation of oxygen were treated with various annealing cycles at peak temperatures of 1150°C, 1200°C and 1250°C in a conventional diffusion furnace. The objective of this study was to examine the structural effects on samples with similar oxygen diffusion lengths (from 17 to 33 μm) achieved by annealing at different times and temperatures. The oxygen and silicon distributions as well as the residual damage and precipitate size and distribution were measured by Auger electron microscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy. In agreement with previous findings, higher temperatures produced a larger and less defective precipitate-free superificial Si region. The buried oxide layer thickened from 0.33 μm to a maximum of 0.43 μm as some precipitates were incorporated into the buried oxide while others adjacent to the buried oxide grew in size (up to 47 nm) and decreased in relative number. A new result of this study of annealing conditions is that the peak temperature has a greater effect on the morphology and crystal quality of the superficial Si structure than does time at temperature. Structural changes for longer anneals at 1150°C are not equivalent to shorter anneals at 1250°C even though the diffusion length of oxygen is the same.

Original languageEnglish (US)
Pages (from-to)167-176
Number of pages10
JournalJournal of Materials Research
Volume4
Issue number1
StatePublished - Jan 1989

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Ion implantation
Oxides
furnaces
ion implantation
Furnaces
wafers
Annealing
precipitates
annealing
oxides
Oxygen
oxygen
Precipitates
diffusion length
Silicon
Temperature
temperature
silicon
Rutherford backscattering spectroscopy
backscattering

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Wilson, S. R., Burnham, M. E., Kottke, M., Lorigan, R. P., Krause, S., Jung, C. O., ... Stoss, P. (1989). Analysis of high temperature (≥1150°C) furnace annealing of buried oxide wafers formed by ion implantation. Journal of Materials Research, 4(1), 167-176.

Analysis of high temperature (≥1150°C) furnace annealing of buried oxide wafers formed by ion implantation. / Wilson, S. R.; Burnham, M. E.; Kottke, M.; Lorigan, R. P.; Krause, Stephen; Jung, C. O.; Leavitt, J. A.; McIntyre, L. C.; Seerveld, J.; Stoss, P.

In: Journal of Materials Research, Vol. 4, No. 1, 01.1989, p. 167-176.

Research output: Contribution to journalArticle

Wilson, SR, Burnham, ME, Kottke, M, Lorigan, RP, Krause, S, Jung, CO, Leavitt, JA, McIntyre, LC, Seerveld, J & Stoss, P 1989, 'Analysis of high temperature (≥1150°C) furnace annealing of buried oxide wafers formed by ion implantation', Journal of Materials Research, vol. 4, no. 1, pp. 167-176.
Wilson, S. R. ; Burnham, M. E. ; Kottke, M. ; Lorigan, R. P. ; Krause, Stephen ; Jung, C. O. ; Leavitt, J. A. ; McIntyre, L. C. ; Seerveld, J. ; Stoss, P. / Analysis of high temperature (≥1150°C) furnace annealing of buried oxide wafers formed by ion implantation. In: Journal of Materials Research. 1989 ; Vol. 4, No. 1. pp. 167-176.
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