Analysis of epitaxial GaxIn1-xAs/InP and Al yIn1-yAs/InP interface region by high resolution x-ray diffraction

C. Giannini, L. Tapfer, E. Tournié, Yong-Hang Zhang, K. H. Ploog

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A detailed strain analysis of high resolution x-ray diffraction patterns taken from GaxIn1-xAs and AlyIn1-yAs layers grown lattice matched on (001) InP substrates shows the existence of distinct interface regions. Our dynamical diffraction model allows us to detect buried interface layers with submonolayer resolution and differences in composition of less than 1% from the rest of the epilayer. Comparison between experimental and theoretical rocking curves reveals that the interface region between epilayer and substrate comprises 2 monolayers InAs plus Ga xIn1-xAs (or AlyIn1-yAs) interlayer with different group III element ratios.

Original languageEnglish (US)
Pages (from-to)149-151
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number2
DOIs
StatePublished - 1993
Externally publishedYes

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x ray diffraction
high resolution
interlayers
diffraction patterns
curves
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Analysis of epitaxial GaxIn1-xAs/InP and Al yIn1-yAs/InP interface region by high resolution x-ray diffraction. / Giannini, C.; Tapfer, L.; Tournié, E.; Zhang, Yong-Hang; Ploog, K. H.

In: Applied Physics Letters, Vol. 62, No. 2, 1993, p. 149-151.

Research output: Contribution to journalArticle

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