Abstract
We analyze a field effect transistor whose operation utilizes the quantum diffraction of electrons by a narrow slit in the gate. Calculations are performed using a low-energy conformal mapping technique which does not assume small-angle scattering. It is shown that the device will exhibit far-field quantum diffraction similar in appearance to the Fraunhofer patterns observed in optics. The diffraction pattern can be detected as current collected at a number of narrow Schottky contacts which together comprise a "viewing screen". Fringe visibilities on the order of 0.5 are predicted. A number of applications of the device are discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 381-386 |
| Number of pages | 6 |
| Journal | Superlattices and Microstructures |
| Volume | 6 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1989 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Kriman, A. M., Bernstein, G. H., Haukness, B. S., & Ferry, D. K. (1989). Analysis of electron diffraction in a novel field-effect transistor. Superlattices and Microstructures, 6(4), 381-386. https://doi.org/10.1016/S0749-6036(89)80006-0