Abstract
We analyze a field effect transistor whose operation utilizes the quantum diffraction of electrons by a narrow slit in the gate. Calculations are performed using a low-energy conformal mapping technique which does not assume small-angle scattering. It is shown that the device will exhibit far-field quantum diffraction similar in appearance to the Fraunhofer patterns observed in optics. The diffraction pattern can be detected as current collected at a number of narrow Schottky contacts which together comprise a "viewing screen". Fringe visibilities on the order of 0.5 are predicted. A number of applications of the device are discussed.
Original language | English (US) |
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Pages (from-to) | 381-386 |
Number of pages | 6 |
Journal | Superlattices and Microstructures |
Volume | 6 |
Issue number | 4 |
DOIs | |
State | Published - 1989 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering