Abstract
We analyze a field effect transistor whose operation utilizes the quantum diffraction of electrons by a narrow slit in the gate. Calculations are performed using a low-energy conformal mapping technique which does not assume small-angle scattering. It is shown that the device will exhibit far-field quantum diffraction similar in appearance to the Fraunhofer patterns observed in optics. The diffraction pattern can be detected as current collected at a number of narrow Schottky contacts which together comprise a "viewing screen". Fringe visibilities on the order of 0.5 are predicted. A number of applications of the device are discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 381-386 |
| Number of pages | 6 |
| Journal | Superlattices and Microstructures |
| Volume | 6 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1989 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Analysis of electron diffraction in a novel field-effect transistor. / Kriman, A. M.; Bernstein, G. H.; Haukness, B. S.; Ferry, D. K.
In: Superlattices and Microstructures, Vol. 6, No. 4, 1989, p. 381-386.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Analysis of electron diffraction in a novel field-effect transistor
AU - Kriman, A. M.
AU - Bernstein, G. H.
AU - Haukness, B. S.
AU - Ferry, D. K.
PY - 1989
Y1 - 1989
N2 - We analyze a field effect transistor whose operation utilizes the quantum diffraction of electrons by a narrow slit in the gate. Calculations are performed using a low-energy conformal mapping technique which does not assume small-angle scattering. It is shown that the device will exhibit far-field quantum diffraction similar in appearance to the Fraunhofer patterns observed in optics. The diffraction pattern can be detected as current collected at a number of narrow Schottky contacts which together comprise a "viewing screen". Fringe visibilities on the order of 0.5 are predicted. A number of applications of the device are discussed.
AB - We analyze a field effect transistor whose operation utilizes the quantum diffraction of electrons by a narrow slit in the gate. Calculations are performed using a low-energy conformal mapping technique which does not assume small-angle scattering. It is shown that the device will exhibit far-field quantum diffraction similar in appearance to the Fraunhofer patterns observed in optics. The diffraction pattern can be detected as current collected at a number of narrow Schottky contacts which together comprise a "viewing screen". Fringe visibilities on the order of 0.5 are predicted. A number of applications of the device are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0024879392&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024879392&partnerID=8YFLogxK
U2 - 10.1016/S0749-6036(89)80006-0
DO - 10.1016/S0749-6036(89)80006-0
M3 - Article
AN - SCOPUS:0024879392
VL - 6
SP - 381
EP - 386
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
IS - 4
ER -