Analysis of electron diffraction in a novel field-effect transistor

A. M. Kriman, G. H. Bernstein, B. S. Haukness, D. K. Ferry

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We analyze a field effect transistor whose operation utilizes the quantum diffraction of electrons by a narrow slit in the gate. Calculations are performed using a low-energy conformal mapping technique which does not assume small-angle scattering. It is shown that the device will exhibit far-field quantum diffraction similar in appearance to the Fraunhofer patterns observed in optics. The diffraction pattern can be detected as current collected at a number of narrow Schottky contacts which together comprise a "viewing screen". Fringe visibilities on the order of 0.5 are predicted. A number of applications of the device are discussed.

Original languageEnglish (US)
Pages (from-to)381-386
Number of pages6
JournalSuperlattices and Microstructures
Volume6
Issue number4
DOIs
StatePublished - 1989

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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