Analysis of electron diffraction in a novel field-effect transistor

A. M. Kriman, G. H. Bernstein, B. S. Haukness, D. K. Ferry

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We analyze a field effect transistor whose operation utilizes the quantum diffraction of electrons by a narrow slit in the gate. Calculations are performed using a low-energy conformal mapping technique which does not assume small-angle scattering. It is shown that the device will exhibit far-field quantum diffraction similar in appearance to the Fraunhofer patterns observed in optics. The diffraction pattern can be detected as current collected at a number of narrow Schottky contacts which together comprise a "viewing screen". Fringe visibilities on the order of 0.5 are predicted. A number of applications of the device are discussed.

Original languageEnglish (US)
Pages (from-to)381-386
Number of pages6
JournalSuperlattices and Microstructures
Volume6
Issue number4
DOIs
StatePublished - 1989

Fingerprint

Field effect transistors
Electron diffraction
field effect transistors
electron diffraction
Diffraction
Conformal mapping
conformal mapping
diffraction
visibility
Visibility
Diffraction patterns
slits
far fields
electric contacts
Optics
diffraction patterns
optics
Scattering
Electrons
scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Analysis of electron diffraction in a novel field-effect transistor. / Kriman, A. M.; Bernstein, G. H.; Haukness, B. S.; Ferry, D. K.

In: Superlattices and Microstructures, Vol. 6, No. 4, 1989, p. 381-386.

Research output: Contribution to journalArticle

Kriman, A. M. ; Bernstein, G. H. ; Haukness, B. S. ; Ferry, D. K. / Analysis of electron diffraction in a novel field-effect transistor. In: Superlattices and Microstructures. 1989 ; Vol. 6, No. 4. pp. 381-386.
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