Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates

Morgan E. Ware; Robert J. Nemanich; Jennifer L. Gray; Robert Hull

doi:10.1063/1.1630362

Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates

Morgan E. Ware, Robert J. Nemanich, Jennifer L. Gray, Robert Hull

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The heteroepitaxial growth of SiGe on a family of Si surfaces that has only recently begun to be fully explored was investigated. It was found that the plastic relaxation of the stress was facilitated by misfit dislocations which follow the lines of intersection of the (111) planes with the respective surfaces. This produces a tiled triangular pattern of dislocations at the interface which should continuously vary from equilateral triangles for a (111) surface to the well known cross hatch of dislocations which form for a (001) surface.

Original language	English (US)
Pages (from-to)	115-122
Number of pages	8
Journal	Journal of Applied Physics
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.1630362
State	Published - Jan 1 2004
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1630362

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abstract = "The heteroepitaxial growth of SiGe on a family of Si surfaces that has only recently begun to be fully explored was investigated. It was found that the plastic relaxation of the stress was facilitated by misfit dislocations which follow the lines of intersection of the (111) planes with the respective surfaces. This produces a tiled triangular pattern of dislocations at the interface which should continuously vary from equilateral triangles for a (111) surface to the well known cross hatch of dislocations which form for a (001) surface.",

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AU - Nemanich, Robert J.

AU - Gray, Jennifer L.

AU - Hull, Robert

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AB - The heteroepitaxial growth of SiGe on a family of Si surfaces that has only recently begun to be fully explored was investigated. It was found that the plastic relaxation of the stress was facilitated by misfit dislocations which follow the lines of intersection of the (111) planes with the respective surfaces. This produces a tiled triangular pattern of dislocations at the interface which should continuously vary from equilateral triangles for a (111) surface to the well known cross hatch of dislocations which form for a (001) surface.

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Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates

Abstract

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