Analog/RF performance analysis of coaxial carbon nanotube MOSFET from non-equilibrium green's function simulation

Yuchi Che, Jin He, Hailang Liang, Qin Chen, Cheng Wang, Hongyu He, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The analog/RF performance of Coaxial Carbon Nanotube Field Effect Transistor (CNTFET) including the trans-conductance efficiency g m/I d, cutoff frequency f t, and maximum oscillation frequency f max are analyzed in details in this paper based on the non-equilibrium Green's function simulation. The analysis method is described and the CNTFET analog/RF performance dependence on the operation bias, device chirality, and gate oxide thickness are demonstrated. These results will be useful for the device scientists and circuit engineers to optimize the CNTFET structure and improve its circuit performance for the potential analog/RF application in near future.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages264-268
Number of pages5
StatePublished - 2012
Externally publishedYes
EventNanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: Jun 18 2012Jun 21 2012

Publication series

NameTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Conference

ConferenceNanotechnology 2012: Advanced Materials, CNTs, Particles, Films and Composites - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period6/18/126/21/12

Keywords

  • Analog/RF performance
  • Coaxial carbon nanotube field effect transistor
  • Nanoscale device
  • Simulation
  • ULSI

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

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