Image processing with Analog Neural Networks, performing horizontal line detection is demonstrated in a single poly, 3-layer metal digital CMOS technology utilizing SOS MESFET devices. Transient characteristics are measured by applying several combinations of grayscale input images. The measured transient response of the ANN array shows good agreement with simulations based on a TOM3 model extracted from the SOS MESFET. A worst case settling time of 4ìs is achieved with the line detector.

Original languageEnglish (US)
Title of host publication2010 IEEE International SOI Conference, SOI 2010
StatePublished - Dec 30 2010
Event2010 IEEE International Silicon on Insulator Conference, SOI 2010 - San Diego, CA, United States
Duration: Oct 11 2010Oct 14 2010

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X


Other2010 IEEE International Silicon on Insulator Conference, SOI 2010
Country/TerritoryUnited States
CitySan Diego, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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