Abstract

Image processing with Analog Neural Networks, performing horizontal line detection is demonstrated in a single poly, 3-layer metal digital CMOS technology utilizing SOS MESFET devices. Transient characteristics are measured by applying several combinations of grayscale input images. The measured transient response of the ANN array shows good agreement with simulations based on a TOM3 model extracted from the SOS MESFET. A worst case settling time of 4ìs is achieved with the line detector.

Original languageEnglish (US)
Title of host publicationProceedings - IEEE International SOI Conference
DOIs
StatePublished - 2010
Event2010 IEEE International Silicon on Insulator Conference, SOI 2010 - San Diego, CA, United States
Duration: Oct 11 2010Oct 14 2010

Other

Other2010 IEEE International Silicon on Insulator Conference, SOI 2010
CountryUnited States
CitySan Diego, CA
Period10/11/1010/14/10

Fingerprint

MESFET devices
Transient analysis
Image processing
Metals
Detectors
Neural networks
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Analog image processing circuit with 0.25μm CMOS compatible SOS MESFETs. / Kim, S.; Lepkowski, W.; Thornton, Trevor; Bakkaloglu, Bertan.

Proceedings - IEEE International SOI Conference. 2010. 5641396.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, S, Lepkowski, W, Thornton, T & Bakkaloglu, B 2010, Analog image processing circuit with 0.25μm CMOS compatible SOS MESFETs. in Proceedings - IEEE International SOI Conference., 5641396, 2010 IEEE International Silicon on Insulator Conference, SOI 2010, San Diego, CA, United States, 10/11/10. https://doi.org/10.1109/SOI.2010.5641396
Kim, S. ; Lepkowski, W. ; Thornton, Trevor ; Bakkaloglu, Bertan. / Analog image processing circuit with 0.25μm CMOS compatible SOS MESFETs. Proceedings - IEEE International SOI Conference. 2010.
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