TY - GEN
T1 - Analog image processing circuit with 0.25μm CMOS compatible SOS MESFETs
AU - Kim, S.
AU - Lepkowski, W.
AU - Thornton, Trevor
AU - Bakkaloglu, Bertan
PY - 2010/12/30
Y1 - 2010/12/30
N2 - Image processing with Analog Neural Networks, performing horizontal line detection is demonstrated in a single poly, 3-layer metal digital CMOS technology utilizing SOS MESFET devices. Transient characteristics are measured by applying several combinations of grayscale input images. The measured transient response of the ANN array shows good agreement with simulations based on a TOM3 model extracted from the SOS MESFET. A worst case settling time of 4ìs is achieved with the line detector.
AB - Image processing with Analog Neural Networks, performing horizontal line detection is demonstrated in a single poly, 3-layer metal digital CMOS technology utilizing SOS MESFET devices. Transient characteristics are measured by applying several combinations of grayscale input images. The measured transient response of the ANN array shows good agreement with simulations based on a TOM3 model extracted from the SOS MESFET. A worst case settling time of 4ìs is achieved with the line detector.
UR - http://www.scopus.com/inward/record.url?scp=78650556430&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650556430&partnerID=8YFLogxK
U2 - 10.1109/SOI.2010.5641396
DO - 10.1109/SOI.2010.5641396
M3 - Conference contribution
AN - SCOPUS:78650556430
SN - 9781424491285
T3 - Proceedings - IEEE International SOI Conference
BT - 2010 IEEE International SOI Conference, SOI 2010
T2 - 2010 IEEE International Silicon on Insulator Conference, SOI 2010
Y2 - 11 October 2010 through 14 October 2010
ER -