AN OPTIMIZED PROCESS FORMING SELF-ENCAPSULATED CU FILMS BY RAPID THERMAL

Terry Alford

AN OPTIMIZED PROCESS FORMING SELF-ENCAPSULATED CU FILMS BY RAPID THERMAL

Arizona State University

Research output: Patent

Abstract

Copper (Cu) is ;an attractive material for interconnect metallization in future integrated circuits (IC) technologies due to its lower bulk resistivity and higher reliability against electromigration. These two characteristics will allow faster signal propagation (i.e., fast computers) and better reliability (i.e., less expensive to operate and maintain). However, Cu is not totally compatible with the current IC technology. Once the (

Original language	English (US)
State	Published - Jan 1 1900

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title = "AN OPTIMIZED PROCESS FORMING SELF-ENCAPSULATED CU FILMS BY RAPID THERMAL",

abstract = "Copper (Cu) is ;an attractive material for interconnect metallization in future integrated circuits (IC) technologies due to its lower bulk resistivity and higher reliability against electromigration. These two characteristics will allow faster signal propagation (i.e., fast computers) and better reliability (i.e., less expensive to operate and maintain). However, Cu is not totally compatible with the current IC technology. Once the (",

author = "Terry Alford",

year = "1900",

month = jan,

day = "1",

language = "English (US)",

type = "Patent",

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TY - PAT

T1 - AN OPTIMIZED PROCESS FORMING SELF-ENCAPSULATED CU FILMS BY RAPID THERMAL

AU - Alford, Terry

PY - 1900/1/1

Y1 - 1900/1/1

N2 - Copper (Cu) is ;an attractive material for interconnect metallization in future integrated circuits (IC) technologies due to its lower bulk resistivity and higher reliability against electromigration. These two characteristics will allow faster signal propagation (i.e., fast computers) and better reliability (i.e., less expensive to operate and maintain). However, Cu is not totally compatible with the current IC technology. Once the (

AB - Copper (Cu) is ;an attractive material for interconnect metallization in future integrated circuits (IC) technologies due to its lower bulk resistivity and higher reliability against electromigration. These two characteristics will allow faster signal propagation (i.e., fast computers) and better reliability (i.e., less expensive to operate and maintain). However, Cu is not totally compatible with the current IC technology. Once the (

M3 - Patent

ER -

AN OPTIMIZED PROCESS FORMING SELF-ENCAPSULATED CU FILMS BY RAPID THERMAL

Abstract

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